Synthesis of Cu2FeSnSe4 thin film by selenization of RF magnetron sputtered precursor

Structural, optical and electrical properties of Cu2FeSnX4 (X=S, Se) thin films prepared by chemical spray pyrolysis

“…The post-sulfurized CFTS film assigns relatively enhanced and sharp peaks having dominant Raman peak observed at ~318 cm -1 (A 1 ) and other small peaks at ~253(B 2 ), 284(A 1 ), and 353(B 2 ) cm -1 [32]. For post-selenized CFTSe film, dominant Raman peak is assigned at ~185 cm -1 main peak and other small peaks are at ~168 and 229 cm -1 [17]. To be concern of secondary phases, the characteristic Raman peaks of related phases have been summarized in Table 3.…”

“…Therefore, we believe that the oxygen and sulfur must co-exist in CFTS as oxygenincorporated form of Cu 2 FeSnO y S 4-y which is summarized in Table 2 [17,30]. This result implies that the crystallinity of as-sprayed film is significantly improved as a result of post-annealing at high temperature in sulfur (selenium) vapor.…”

“…For the sake of alternative absorber layer, a member of Cu-based quaternary chalcogenide family Cu 2 FeSnS 4 (Se 4 ) (CFTS (Se)) [6] has been considered as a promising candidate due to earth abundant constituents and similar structural and optical properties to CZTSSe [2,4,7,8]. Recently, a number of researches have been carried out on CFTS (Se) materials and reported to have optical band gaps, 1.28-1.50 eV for CFTS [7][8][9][10][11][12][13][14][15][16] and 1.10-1.25 eV for CFTSe [17][18][19] suitable for absorber layer in photovoltaic application. The crystal structure of CFTS (Se) (stannite (ST), space group (I 2m)) is shown in Fig.…”

“…Similarly, the CFTSe quaternary semiconductor has also been investigated adopting various fabricating techniques. Meng et al [17] have fabricated CFTSe thin film from sputtered precursor followed by selenization. CFTSe sheet [18] and nanoparticles including nanoflowers and nanosheets [19] have been successfully synthesized by solvothermal method.…”

Structural and optical tunability by reaction time of selenization in Cu2FeSnSe4 thin films

“…So, there is an urgent need to develop solar cells made of environmentally friendly and earth abundant elements M A N U S C R I P T A C C E P T E D ACCEPTED MANUSCRIPT 2 [5,6]. Quaternary semiconductor CFTSe with high absorption coefficient (>10 -4 cm -1 ), suitable band gap, abundance of constituent and non-toxic elements make it attractive options as an alternative absorber material to CIGS [7]. A variety of techniques such as hot-injection method [8], aerosol assisted chemical vapour deposition method [9] and chemical spray pyrolysis method [10] etc.…”