Magnetic freeze-out study of the DX-linked shallow level in Si-doped Al<sub>x</sub>Ga<sub>1-x</sub>As under hydrostatic pressure

Kadri, A.; Ranz, E.; Zitouni, K.; Saidi, N.; Portal, J. C.; Lavielle, D.; Sirvin, R.; Grattepain, C.; Chand, Naresh

doi:10.1088/0268-1242/6/6/018

Cited by 3 publications

(2 citation statements)

References 8 publications

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“…[18][19][20][21][22][23] Liu et al 18 performed photoluminescence measurements on S and Si doped GaAs under hydrostatic pressure. They observed a deep donor state which was pushed into the forbidden energy gap in the pressure range of 28-77 kbar and exhibited a pressure dependence that was not in agreement with any known conduction band minimum.…”

Section: Discussionmentioning

confidence: 99%

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Photoexcited states of DX centers in Si doped AlxGa1−xAs

Jia

Grimmeiss

1996

Journal of Applied Physics

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Deep level transient spectroscopy (DLTS) and single shot capacitance techniques were used to investigate Si doped AlxGa1−xAs with Al compositions ranging from 0.30 to 0.59. Under illumination, an additional DLTS peak was observed in samples with Al compositions close to x=0.38. This peak has been shown to originate from a localized state with an energy level shallower than the DX ground state and energy barriers for both electron emission and capture processes. Persistent photoconductivity effects related to this state were observed below 50 K. Evidence is provided that this state is a metastable state of the Si donor. Its origin is discussed in terms of the intermediate state of a negative U DX center and a metastable negative U configuration of the Si donor. A further photoinduced DLTS peak was observed within a narrow Al composition range that has been identified as the shallowest DX level of the four distinct DX levels originating from different local environments of the donors.

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Section: Discussionmentioning

confidence: 99%

“…A similar study was performed by Kadri et al in Si doped Al x Ga 1Ϫx As. 21 They also detected the A 1 level after illumination and reported that no potential barrier was observed for the electron capture in the A 1 level.…”

Section: Discussionmentioning

confidence: 99%

Photoexcited states of DX centers in Si doped AlxGa1−xAs

Jia

Grimmeiss

1996

Journal of Applied Physics

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Metastable states of Si donors in AlxGa1−xAs

Jia

Grimmeiss

1996

Journal of Applied Physics

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Donor related states in Si-doped AlGaAs with Al compositions ranging from 0.30 to 0.59 were investigated by capacitance measurements. In addition to the stable Si-DX state, two metastable states of the silicon donor were observed. Of the two metastable states, the shallower one is attributed to the X-conduction band related effective mass state arising from substitutional silicon on the group III site. The deeper one is proposed to be related to a donor configuration different from both the substitutional configuration and that of the DX state.

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DX centre characterization in Se-doped AlGaAs under hydrostatic pressure

Calleja¹,

García²,

Romero³

et al. 1992

Semicond. Sci. Technol.

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Se-related DX centres in AlGaAs alloys have been characterized by deep-level transient spectroscopy techniques under hydrostatic pressure. The thermai-emission energy, E. = 0.24 0.02 eV, i s constant throughout the alloy range considered (0.29 < x < 0.77). and independent of the applied pressure. The thermai-capture barrier energy follows a V-shaped curve as a function of the alloy composition. with E , , , , = 0.13 eV for Ai compositions around 38 %. where the Se-DX centre electron occupancy is a maximum. Emission spectra show.up to three peaks generated by three discrete emission rates. Their pressure dependence suggests the existence of three close discrete DX levels originating from changes of the donor local environment. These resuits'confirm the model proposed by Chadi and Chang for Se-related DX centres (group-VI donors). As compared with the Si-DX centre properties quantitative differences originate from a shallower energy position of Se-DX centres in the gap, owing to smaller values of the tnermai emission and capture barriers, 200 meV and 70 meV lower, respectiveiy.

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Magnetic freeze-out study of the DX-linked shallow level in Si-doped Al_xGa_1-xAs under hydrostatic pressure

Cited by 3 publications

References 8 publications

Photoexcited states of DX centers in Si doped AlxGa1−xAs

Photoexcited states of DX centers in Si doped AlxGa1−xAs

Metastable states of Si donors in AlxGa1−xAs

DX centre characterization in Se-doped AlGaAs under hydrostatic pressure

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Magnetic freeze-out study of the DX-linked shallow level in Si-doped AlxGa1-xAs under hydrostatic pressure

Cited by 3 publications

References 8 publications

Photoexcited states of DX centers in Si doped AlxGa1−xAs

Photoexcited states of DX centers in Si doped AlxGa1−xAs

Metastable states of Si donors in AlxGa1−xAs

DX centre characterization in Se-doped AlGaAs under hydrostatic pressure

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Product

Resources

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Magnetic freeze-out study of the DX-linked shallow level in Si-doped Al_xGa_1-xAs under hydrostatic pressure