Magnetic field induced metal–insulator transitions in p-SiGe

Coleridge, P. T.

doi:10.1016/s0038-1098(03)00571-4

Cited by 12 publications

(21 citation statements)

References 33 publications

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“…An unusual phenomenon, namely, the so called reentrant metal-insulator transition, was also found in this structure in a magnetic field at a filling factor ν = 3/2 [1][2][3][4][5][6]. In [2], this anomaly was related to the presence of smooth large scale potential fluctuations with an amplitude comparable with the Fermi energy.…”

Section: Introductionmentioning

confidence: 86%

“…To analyze these anomalies, we use the idea employed in [3][4][5] to explain the specific features of electrical resistivity in Si/SiGe/Si at ν = 3/2. They were related to the change of the relative position of spinsplit (0↑, 1↓) Landau levels induced by the dependence of the g* factor of the magnetic field.…”

Section: ( For Clarity)mentioning

confidence: 99%

“…The rather interesting kinetic properties of pSi/SiGe/Si structures have been attracting attention of researchers for the last two decades [1][2][3][4][5][6]. The quantum well in p-Si/Si 1−x Ge x /Si is located in the strained Si 1−x Ge x layer; therefore, the triply degenerate (without regard for spin) valence band of SiGe splits into three bands due to spin-orbit coupling and mechanical stresses.…”

Section: Introductionmentioning

confidence: 99%

“…In [2], this anomaly was related to the presence of smooth large scale potential fluctuations with an amplitude comparable with the Fermi energy. In [3][4][5], however, this phenomenon was explained by the crossing of Landau levels with opposite spin directions (0↑, 1↓) when the magnetic field strength changes.…”

Section: Introductionmentioning

confidence: 99%

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Magnetoresistivity and acoustoelectronic effects in a tilted magnetic field in p-Si/SiGe/Si structures with an anisotropic g factor

Drichko

Smirnov

Суслов

et al. 2010

J. Exp. Theor. Phys.

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Magnetoresistivity ρxx and ρxy and the acoustoelectronic effects are measured in p-Si/SiGe/Si with an impurity concentration p = 1.99 × 10 11 cm −2 in the temperature range 0.3-2.0 K and an tilted magnetic field up to 18 T. The dependence of the effective gfactor on the angle of magnetic field tilt θ to the normal to the plane of a two dimensional p Si/SiGe/Si channel is determined. A first order ferromagnet-paramagnet phase transition is observed in the magnetic fields corresponding to a filling factor ν = 2 at θ ≈ 59 o -60 o .

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Section: Introductionmentioning

confidence: 86%

Section: ( For Clarity)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Magnetoresistivity and acoustoelectronic effects in a tilted magnetic field in p-Si/SiGe/Si structures with an anisotropic g factor

Drichko

Smirnov

Суслов

et al. 2010

J. Exp. Theor. Phys.

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“…[2] that anomaly was attributed to the presence of long-range potential fluctuations with amplitude comparable with the Fermi energy in this material. However, the author of [3][4][5] explained those magnetoresistance anomalies by crossing of Landau levels with different spin directions 0↑ and 1↓ when the magnetic field increases. In the present work the studies of magnetoresistance and Hall effect were conducted in tilted magnetic fields to determine the dependence of g-factor on the tilt angle and the possible causes of the anomalies in magnetoresistance and conductivity at filling factor ν=2 in the sample p-Si/SiGe with p=2×10 11 cm −2 .…”

Section: Introductionmentioning

confidence: 99%

Magnetoresistance in dilute p-Si/SiGe in parallel and tilted magnetic fields

Drichko¹,

Smirnov²,

Суслов³

et al. 2009

Ann. Phys.

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We report the results of an experimental study of the magnetoresistance ρxx and ρxy in two samples of p-Si/SiGe with low carrier concentrations p=8.2×10 10 cm −2 and p=2×10 11 cm −2 . The research was performed in the temperature range of 0.3-2 K and in the magnetic fields of up to 18 T, parallel or tilted with respect to the two-dimensional (2D) channel plane. The large in-plane magnetoresistance can be explained by the influence of the in-plane magnetic field on the orbital motion of the charge carriers in the quasi-2D system. The measurements of ρxx and ρxy in the tilted magnetic field showed that the anomaly in ρxx, observed at filling factor ν=3/2 is practically nonexistent in the conductivity σxx. The anomaly in σxx at ν=2 might be explained by overlapping of the levels with different spins 0↑ and 1↓ when the tilt angle of the applied magnetic field is changed. The dependence of g-factor g * (Θ)/g * (0 0 ) on the tilt angle Θ was determined.

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Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology

Sammak

Sabbagh

Hendrickx

et al. 2019

Adv Funct Materials

123

126

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Buried-channel semiconductor heterostructures are an archetype material platform for the fabrication of gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface; however, nearby surface states degrade the electrical properties of the starting material. Here, a 2D hole gas of high mobility (5 × 10 5 cm 2 V −1 s −1 ) is demonstrated in a very shallow strained germanium (Ge) channel, which is located only 22 nm below the surface. The top-gate of a dopant-less field effect transistor controls the channel carrier density confined in an undoped Ge/SiGe heterostructure with reduced background contamination, sharp interfaces, and high uniformity. The high mobility leads to mean free paths ≈ 6 µm, setting new benchmarks for holes in shallow field effect transistors. The high mobility, along with a percolation density of 1.2 × 10 11 cm −2 , light effective mass (0.09m e ), and high effective g-factor (up to 9.2) highlight the potential of undoped Ge/SiGe as a low-disorder material platform for hybrid quantum technologies.

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Magnetic field induced metal–insulator transitions in p-SiGe

Cited by 12 publications

References 33 publications

Magnetoresistivity and acoustoelectronic effects in a tilted magnetic field in p-Si/SiGe/Si structures with an anisotropic g factor

Magnetoresistivity and acoustoelectronic effects in a tilted magnetic field in p-Si/SiGe/Si structures with an anisotropic g factor

Magnetoresistance in dilute p-Si/SiGe in parallel and tilted magnetic fields

Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology

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