Magnetic-field-controlled noise-activated switching in a nonlinear three-terminal nanojunction

Hartmann, Fabian; Hartmann, David; Kowalzik, P.; Gammaitoni, L.; Forchel, A.; Worschech, L.

doi:10.1063/1.3330861

Cited by 8 publications

(6 citation statements)

References 16 publications

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“…In fact, computation with switches characterized by P e > 0 is far from being a mere hypothesis. Recently addressed within the paradigm of noise driven switches [14,22,23], it and has been the topic of a focussed interest in the framework of the so-called stochastic computing [24], introduced by John Von Newmann [25] since the sixties.…”

Section: Fig 3: Energy Ratio ηL As a Function Of The Error Probabilitymentioning

confidence: 99%

Beating the Landauer's limit by trading energy with uncertainty

Gammaitoni

2011

Preprint

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According to the International Technology Roadmap for Semiconductors in the next 10-15 years the limits imposed by the physics of switch operation will be the major roadblock for future scaling of the CMOS technology. Among these limits the most fundamental is represented by the so-called Shannon-von Neumann-Landauer limit that sets a lower bound to the minimum heat dissipated per bit erasing operation. Here we show that in a nanoscale switch, operated at finite temperature T, this limit can be beaten by trading the dissipated energy with the uncertainty in the distinguishability of switch logic states. We establish a general relation between the minimum required energy and the maximum error rate in the switch operation and briefly discuss the potential applications in the design of future switches.

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Section: Fig 3: Energy Ratio ηL As a Function Of The Error Probabilitymentioning

confidence: 99%

Beating the Landauer's limit by trading energy with uncertainty

Gammaitoni

2011

Preprint

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“…These situations increase the importance of developing nanoelectronics that works even in noisy environment, such as in automobiles. Stochastic resonance (SR) has been considered in electronics recently to coexist with noise [1][2][3]. The SR is a phenomenon in which the response of a system is optimized by adding noise [4,5].…”

Section: Introductionmentioning

confidence: 99%

Control of stochastic resonance response in a GaAs‐based nanowire field‐effect transistor

Kasai

Shiratori

Miura

et al. 2011

Phys. Status Solidi (c)

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Control of stochastic resonance (SR) response in a GaAs‐based nanowire FET is investigated for its application to nanoelectronics. The SR is a phenomenon in which the response to a weak signal is optimized by adding noise. Experiments clarify that the peak position is controlled by the gate offset voltage. The peak height also depends on the offset voltage and decreases when the peak position places in high noise region. Theoretical analysis indicates that the peak position depends only on the offset voltage whereas the height is also controlled by device dimensions. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…25) The phenomenon has been explained as stochastic resonance (SR), [25][26][27] which has been energetically investigated in various systems such as complementary metal oxide semiconductors, 28) Si nanowires, 29) and GaAs nanowires. 30,31) Conventional CNT-FETs have p-type characteristics, revealing that the CNT-FETs have a nonlinear system. 32,33) In this work, the SR in CNT-FETs was demonstrated by modulating the back gate of CNT-FETs in the subthreshold regime.…”

Section: Introductionmentioning

confidence: 99%

Robust Noise Characteristics in Carbon Nanotube Transistors Based on Stochastic Resonance and Their Summing Networks

Hakamata

Ohno

Maehashi

et al. 2011

Jpn. J. Appl. Phys.

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Robust noise characteristics in carbon nanotube field-effect transistors (CNT-FETs) based on stochastic resonance (SR) were demonstrated to detect small signals in noisy environments. When weak pulse trains were applied to a CNT-FET in the subthreshold regime, the correlation coefficient between the input and output signals increased upon adding an appropriate intensity of noise. Offset-voltage dependences were investigated, and moreover, a virtual summing network was formed using CNT-FETs having different offset voltages. The measurement indicated that responses correlated with the input signals were enhanced in a wide range of noise intensity. Therefore, the summing network based on SR is a promising candidate for highly sensitive label-free sensors which are to be utilized in unintentionally noisy environments.

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Magnetic-field-controlled noise-activated switching in a nonlinear three-terminal nanojunction

Cited by 8 publications

References 16 publications

Beating the Landauer's limit by trading energy with uncertainty

Beating the Landauer's limit by trading energy with uncertainty

Control of stochastic resonance response in a GaAs‐based nanowire field‐effect transistor

Robust Noise Characteristics in Carbon Nanotube Transistors Based on Stochastic Resonance and Their Summing Networks

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