Magnetic anisotropy in Fe films deposited on SiO2/Si(001) and Si(001) substrates

Комогорцев, С. В.; Варнаков, С. Н.; Satsuk, S A; Yakovlev, I. A.; Овчинников, С. Г.

doi:10.1016/j.jmmm.2013.09.058

Cited by 28 publications

(8 citation statements)

References 32 publications

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“…The FeO x /Fe films exhibit an effective uniaxial magnetic anisotropy in the film plane, which arises primarily from geometric surface/grain shape effects connected to a self shadowing effect during the oblique sputter deposition (see Figure S4, Supporting Information). [45][46][47][48] Magnetization curves along the inplane magnetic easy and hard axes were recorded by measuring the intensity in the Kerr micrographs at varying magnetic field (magnetooptical Kerr effect (MOKE) magnetom etry) (Figure 2a). [49] Along the easy axis, the shape of the curve is close to rectangular with a remanence ratio M R /M S ≈ 1.…”

Section: Feo X /Fe Thin Films Display Uniaxial Anisotropy and Blockedmentioning

confidence: 99%

Voltage‐Controlled Deblocking of Magnetization Reversal in Thin Films by Tunable Domain Wall Interactions and Pinning Sites

Zehner

Soldatov

Schneider

et al. 2020

Adv Elect Materials

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so far, mainly originates from the elec tric currents utilized to control the mag netic properties. A promising alternative for increasing the energy efficiency of magnetic devices is to control the mag netism by electric fields instead of electric currents. This possibility has triggered intense research into magnetoelectric materials, but much of this is restricted to low temperature and high voltage opera tion and/or complex layer synthesis. [1] More recently, magnetoelectric appro aches involving the voltagegating of mag netic nanostructures via a dielectric oxide or an electrolyte were examined. [1-3] In these approaches, ferro and ferrimagnetic metals or oxides exhibiting Curie tem peratures above room temperature can be used and often only few volts are required during gating. The modulation of mag netic properties in voltagegated magnetic nanostructures is based on either voltage induced capacitive charging or electro chemical (magnetoionic) processes. [2-4] Voltageinduced capacitive charging of a ferromagnetic metal interface causes volatile changes in the sur face electronic band structure that affect the intrinsic magnetic properties in just a few atomic layers. [5-10] In contrast, magneto ionic mechanisms involve voltageinduced ion migration and electrochemical reactions, [2,3,11-13] and can therefore induce very large and nonvolatile magnetic property changes. [12,14-18] As a High energy efficiency of magnetic devices is crucial for applications such as data storage, computation, and actuation. Redox-based (magneto-ionic) voltage control of magnetism is a promising room-temperature pathway to improve energy efficiency. However, for ferromagnetic metals, the magnetoionic effects studied so far require ultrathin films with tunable perpendicular magnetic anisotropy or nanoporous structures for appreciable effects. This paper reports a fully reversible, low voltage-induced collapse of coercivity and remanence by redox reactions in iron oxide/iron films with uniaxial in-plane anisotropy. In the initial iron oxide/iron films, Néel wall interactions stabilize a blocked state with high coercivity. During the voltage-triggered reduction of the iron oxide layer, in situ Kerr microscopy reveals inverse changes of coercivity and anisotropy, and a coarsening of the magnetic microstructure. These results confirm a magneto-ionic deblocking mechanism, which relies on changes of the Néel wall interactions, and of the microstructural domainwall-pinning sites. With this approach, voltage-controlled 180° magnetization switching with high energy-efficiency is achieved. It opens up possibilities for developing magnetic devices programmable by ultralow power and for the reversible tuning of defect-controlled materials in general.

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Section: Feo X /Fe Thin Films Display Uniaxial Anisotropy and Blockedmentioning

confidence: 99%

Voltage‐Controlled Deblocking of Magnetization Reversal in Thin Films by Tunable Domain Wall Interactions and Pinning Sites

Zehner

Soldatov

Schneider

et al. 2020

Adv Elect Materials

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“…This behaviour was observed earlier for (111) Fe 3+ x Si 1− x films [ 53 ] and can be related to the surface of the Si substrate and Si(111)/Fe 3+ x /Si 1− x (111) interface effects. Another reason may be associated with the features of an oblique deposition, which were observed earlier in Fe and other iron silicide films [ 54 ]. Nonetheless, we observe uniaxial anisotropy for sample #7 “Ge 7 nm”.…”

Section: Resultsmentioning

confidence: 99%

Asymmetric Interfaces in Epitaxial Off-Stoichiometric Fe3+xSi1−x/Ge/Fe3+xSi1−x Hybrid Structures: Effect on Magnetic and Electric Transport Properties

et al. 2021

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Three-layer iron-rich Fe3+xSi1−x/Ge/Fe3+xSi1−x (0.2 < x < 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1−x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1−x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1−x. The average lattice distortion and residual stress of the upper Fe3+xSi1−x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of −0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1−x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1−x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1−x, which implies the epitaxial orientation relationship of Fe3+xSi1−x (111)[0−11] || Ge(111)[1−10] || Fe3+xSi1−x (111)[0−11] || Si(111)[1−10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.

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“…Тенденция к миниа-тюризации электронных устройств и созданию приборов с качественно новыми принципами работы требует исследования свойств различных наноструктур. В связи с этим объектами интенсивного исследования являются как пленки Fe нанометровой толщины [1,2], нанострукту-рированные пленки Fe [3], так и сами наночастицы Fe [4]. Пленки Fe вызывают интерес с точки зрения их магнитных свойств, а также перспективы использования в гибридных структурах.…”

Section: поступило в редакцию 20 марта 2018 гunclassified

Электрические и магнитные свойства ультратонких поликристаллических пленок Fe, выращенных на SiO-=SUB=-2-=/SUB=-/Si(001)

Балашев¹,

Ermakov²,

Chebotkevich³

et al. 2018

Письма В Журнал Технической Физики

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Ultrathin polycrystalline Fe films have been grown on the oxidized surface of a Si(001) substrate. The resistivity and magnetic hysteresis of Fe films have been measured in the range of thickness from 2.5 to 10 nm. Based on the analysis of the data obtained, it is suggested that there is a transition to the structurally continuous film at a thickness of ~6 nm. It is found that Fe grains in this film acquire the preferred (111) orientation during this transition.

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Magnetic anisotropy in Fe films deposited on SiO2/Si(001) and Si(001) substrates

Cited by 28 publications

References 32 publications

Voltage‐Controlled Deblocking of Magnetization Reversal in Thin Films by Tunable Domain Wall Interactions and Pinning Sites

Voltage‐Controlled Deblocking of Magnetization Reversal in Thin Films by Tunable Domain Wall Interactions and Pinning Sites

Asymmetric Interfaces in Epitaxial Off-Stoichiometric Fe3+xSi1−x/Ge/Fe3+xSi1−x Hybrid Structures: Effect on Magnetic and Electric Transport Properties

Электрические и магнитные свойства ультратонких поликристаллических пленок Fe, выращенных на SiO-=SUB=-2-=/SUB=-/Si(001)

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