2016
DOI: 10.12693/aphyspola.130.573
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Magnetic and Transport Properties of Possibly Topologically Nontrivial Half-Heusler Bismuthides RMBi (R = Y, Gd, Dy, Ho, Lu; M = Pd, Pt)

Abstract: High quality single crystals of some representatives of half-Heusler family were grown from Bi-flux. For single crystals characterization, X-ray diffraction and scanning electron microscopy techniques were used. The lowtemperature physical properties of the synthesized crystals were determined by means of magnetization, magnetic susceptibility, electrical resistivity and heat capacity measurements. For each compound but LuPtBi, the electrical resistivity varies in a semimetallic manner at high temperatures, an… Show more

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Cited by 9 publications
(12 citation statements)
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References 21 publications
(44 reference statements)
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“…Figure 3 a shows the temperature dependence of the resistivity ρ YPtBi of this YPtBi film. We observed that ρ YPtBi increases with lowering temperature, consistent with the semi-metallic behavior observed in bulk YPtBi 32 . However, the change of ρ YPtBi at low temperature is only 4%, which is one order of magnitude smaller than that (~ 50%) observed in bulk YPtBi.…”
Section: Deposition and Characterization Of Single Yptbi Thin Filmssupporting
confidence: 87%
See 1 more Smart Citation
“…Figure 3 a shows the temperature dependence of the resistivity ρ YPtBi of this YPtBi film. We observed that ρ YPtBi increases with lowering temperature, consistent with the semi-metallic behavior observed in bulk YPtBi 32 . However, the change of ρ YPtBi at low temperature is only 4%, which is one order of magnitude smaller than that (~ 50%) observed in bulk YPtBi.…”
Section: Deposition and Characterization Of Single Yptbi Thin Filmssupporting
confidence: 87%
“…We fabricated a 4-terminal Hall bar structure with size of 60 × 100 μm 2 by optical lithography and ion-milling for electrical measurements. We obtained the charge conductivity σ YPtBi of 1.5 × 10 5 Ω −1 m −1 , which is similar to that of bulk YPtBi 32 . From the Hall measurement, we confirmed a large carrier density of 7.1 × 10 22 cm −3 .…”
Section: Deposition and Characterization Of Single Yptbi Thin Filmssupporting
confidence: 67%
“…For both compounds, ρ xx (T ) is similar to those observed in other half-Heusler bismuthides. 4,8,9,[38][39][40][41] with decreasing temperature; for HoPtBi, down to the lowest temperatures studied and for TbPtBi, down to T N only. The antiferromagnetic phase transition in HoPtBi manifests itself as a distinct kink in ρ xx (T ) (see the inset to Fig.…”
Section: B Electrical Resistivitymentioning
confidence: 86%
“…Remarkably, some of them exhibit coexistence of superconductivity and antiferromagnetism [6,7,[9][10][11] In this paper, we report on the low-temperature thermodynamic and transport properties of single-crystalline TbPdBi, supplemented by neutron diffraction data…”
Section: Introductionmentioning
confidence: 99%