Magnetic and magnetocaloric properties of Er-Co-Al thin-film alloys

Kim, Miri; Kim, Jong Woo; Lim, Sang Ho

doi:10.1007/s12540-015-5063-9

Cited by 2 publications

(3 citation statements)

References 24 publications

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“…Recently, in order to obtain high quality ZTO films, various deposition methods have been used, including magnetron sputtering [5,6] and atomic layer deposition [7]. Among the various deposition methods that are available, RF magnetron sputtering is widely used, due to its ability to produce uniform films over large areas.…”

Section: Introductionmentioning

confidence: 99%

“…Among the various deposition methods that are available, RF magnetron sputtering is widely used, due to its ability to produce uniform films over large areas. However, the optical and electrical properties of as deposited ZTO films without substrate In a previous study, S. Chang reported low pressure H2/N2 annealing process on ITO film to enhance opto-electrical performance and suggested the optimal H2/N2 gas flow rate of 6/6 sccm [6].…”

Section: Introductionmentioning

confidence: 99%

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Enhancement of the Opto-Electrical Properties of Ag Intermediate ZTO Films by Vacuum Annealing

2017

Korean J. Met. Mater.

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Sn-doped ZnO (ZTO)/Ag/ZTO tri-layer films were deposited on glass substrates by radio frequency (RF) and direct current (DC) magnetron sputtering and then vacuum annealed at 100, 200 and 300 ℃ for 30 min with a proportions of H2/N2 gas flow of 6/6 sccm, to investigate the effects of annealing temperature on their electrical, and optical properties. After annealing at a temperature of 300 ℃, the optical transmittance in the visible wavelength region increased from 82.0 to 83.8% and their electrical resistivity decreased to as low as 5.38×10-5 Ω cm at an annealing temperature of 300 ℃. The figure of merit revealed that ZTO/Ag/ZTO films annealed at 300 ℃ have higher optical and electrical performance than the other TCO films prepared under different conditions. † (

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Enhancement of the Opto-Electrical Properties of Ag Intermediate ZTO Films by Vacuum Annealing

2017

Korean J. Met. Mater.

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“…In addition, TIO films have shown higher carrier mobility than conventional Sn-doped In2O3 (ITO) [2]. Various deposition methods have been used to obtain high-quality TIO films, including magnetron sputtering [3] and pulsed laser deposition [4].…”

Section: Introductionmentioning

confidence: 99%

Effect of Post-Deposition Annealing on the Structural, Optical and Electrical Properties of Ti-doped Indium Oxide Thin Films

Kim¹,

Heo²,

Moon³

et al. 2016

Korean J. Met. Mater.

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Ti-doped In2O3 (TIO) thin films were deposited on glass substrates by RF magnetron sputtering. The films were then annealed at 100, 200 or 300 °C for 30 min to investigate the effects of the annealing temperature on the films' structural, electrical and optical properties. The films annealed at 200 °C and above were polycrystalline in phase, and their electrical resistivity decreased to as low as 7.5×10-4 Ω cm at the annealing temperature of 300 °C. The films' optical transmittance in the visible wavelength region also improved from 77.7% to 81.2% when the annealing temperature was increased. The TIO films' figures of merit were evaluated, showing that the TIO films annealed at 300 ℃ had better optical and electrical performance than the other films prepared using lower-temperature or no annealing. † (

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Magnetic and magnetocaloric properties of Er-Co-Al thin-film alloys

Cited by 2 publications

References 24 publications

Enhancement of the Opto-Electrical Properties of Ag Intermediate ZTO Films by Vacuum Annealing

Enhancement of the Opto-Electrical Properties of Ag Intermediate ZTO Films by Vacuum Annealing

Effect of Post-Deposition Annealing on the Structural, Optical and Electrical Properties of Ti-doped Indium Oxide Thin Films

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