Effect of Post-Deposition Annealing on the Structural, Optical and Electrical Properties of Ti-doped Indium Oxide Thin Films

Abstract

Ti-doped In2O3 (TIO) thin films were deposited on glass substrates by RF magnetron sputtering. The films were then annealed at 100, 200 or 300 °C for 30 min to investigate the effects of the annealing temperature on the films' structural, electrical and optical properties. The films annealed at 200 °C and above were polycrystalline in phase, and their electrical resistivity decreased to as low as 7.5×10-4 Ω cm at the annealing temperature of 300 °C. The films' optical transmittance in the visible wavelength region also improved from 77.7% to 81.2% when the annealing temperature was increased. The TIO films' figures of merit were evaluated, showing that the TIO films annealed at 300 ℃ had better optical and electrical performance than the other films prepared using lower-temperature or no annealing. † (

Mechanical and Electrical Properties for ITO (Thin Film) Coating PET

“…Almo'men Bellah Alawnah, Ahed J Alkhatib, Areej AlZoubi, and Ola Hayajnah, Mechanical and Electrical Properties for ITO (Thin Film) Coating PET the ITO films, leading to improved performance in solar cell devices. The study also highlighted the importance of optimizing the annealing conditions to achieve the desired properties of ITO films for specific optoelectronic applications [14].…”