Magnetic and half-metallic properties of Cr-doped /spl beta/-SiC

Kim, Y. S.; Kim, H.; Chung, Yong‐Chae

doi:10.1109/intmag.2005.1463559

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2010

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“…We had to substitute one of the Si or C atoms for Mn. We chose to replace Si with Mn because of its higher ferromagnetic state stability (Kim Y. S. et al, 2004). depends on the characteristics of the partially filled d-orbitals.…”

Section: Resultsmentioning

confidence: 99%

Effects of Mn Substitution on Magnetic and Electronic Properties of \beta-SiC Semiconductor

Izadifard¹,

Ghazi²,

Hosaini³

2010

APR

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Wide band gap semiconductors doped by transition metals are attracting much attention in part because of possible 'spintronics' applications. Using pseudo-potential plane-wave calculations and density functional theory (DFT), we studied effects of doping Mn of various concentrations on the cubic silicon carbide structure (-SiC). Band structures and density of states (DOSs) were calculated for -SiC and Si 1-x Mn x C (with x= 0.0313, 0.0625, and 0.25). Analyses of the DOSs revealed that the diluted ferromagnetic semiconductor Si 1-x Mn x C, i.e. SiC with Mn substituted for Si, should be a half-metal. Our results show spin polarization at Fermi energy (E f ), and a stable ferromagnetic state for x= 0.0625.

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Section: Resultsmentioning

confidence: 99%