Lumped element modelling of coplanar series RF MEMS switches

Marcelli, R.; Bartolucci, G.; Minucci, G.; Margesin, B.; Giacomozzi, F.; Vitulli, F.

doi:10.1049/el:20046490

Cited by 18 publications

(9 citation statements)

References 3 publications

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“…Equivalent circuits of isolated switches on uniform transmission lines have been derived for some switch configurations, which show a very good agreement with measurements [6], [7]. Anyway, full-wave EM simulation is often mandatory to accurately predict the behavior of complex structures with several MEMS devices and line discontinuities [1], [8].…”

Section: Introductionmentioning

confidence: 75%

Mastering parasitics in complex MEMS circuits

Arcioni

Conciauro

Farinelli

et al. 2005

2005 European Microwave Conference

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Because of the tight coupling between closely spaced 3-D elements, parasitic effects often degrade the overall performance of complex MEMS circuits. A Single-Pole-Double-Throw (SPDT) switch in CPW technology consisting of a T-junction with one series-resistive and one shunt-capacitive MEMS switches per arm has been fabricated and tested. Parasitic coupling is shown to significantly affect the isolation of the isolated arm. While full-wave EM simulators would lead to unaffordable computational efforts to master such phenomena, a simple yet accurate planar approach recently presented is employed to effectively model and predict the behaviour of both the whole SPDT and its components. Having identified the portions of the circuit responsible for the spurious coupling, the planar approach has been used to modify the geometry of the shunt MEMS so as to minimize the parasitics, yielding a significantly improved performance of the SPDT.

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Section: Introductionmentioning

confidence: 75%

Mastering parasitics in complex MEMS circuits

Arcioni

Conciauro

Farinelli

et al. 2005

2005 European Microwave Conference

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“…To this end the proper modeling of the membrane plays a crucial role. A number of papers have been published on this topic in literature [14][15][16][17][18][19]. Recently a general and accurate equivalent circuit has been developed in [8] for the coplanar bridge in the "up" position.…”

Section: The Analytic Model With the Bridge In The "Up" Positionmentioning

confidence: 99%

The Image Phase Approach for the Design of Rf Mems Shunt Switches

Bartolucci¹,

Angelis²,

Lucibello³

et al. 2016

PIER C

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Abstract-In this paper a new method to solve the microwave matching problem of MEMS shunt connected switches is proposed, as an extension of a previously presented approach based on the image parameter formulation. The image phase concept is used to impose the matching condition in the "ON" state of the device, which is the most critical one. Two different configurations are investigated: a single basic cell and double basic cell topologies. For both of them an analytic modeling procedure is developed, and the equations for the synthesis of the structures are derived. In order to provide some examples, the method has been applied to a previously realized MEMS shunt variable capacitor.

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“…The second one is a technological limitation related to the intrinsic resolution and reliability of the deposition techniques, which do not allow a surface roughness better than few tens of nm [1]. In order to develop an equivalent circuit for this component the same approach proposed in [2] for the series connected MEMS switch is here used for the switch in shunt configuration. More in detail, the structure can be considered composed by gaps between conductors and metallic strips with rectangular transversal sections.…”

Section: Lumped Element Model and Switch Realizationmentioning

confidence: 99%

“…The capacitance C f accounts for the fringing effects. The metal strips exceeding the actuation area, going up to the CPW ground plane, have been modelled by using two RL branches, obtained following the analytic approach in [2,3] …”

Section: Lumped Element Model and Switch Realizationmentioning

confidence: 99%