Luminescent properties of the oxygen impurity centres in A1N

Pastrňák, J.; Pačesová, S.; Roskovcová, L.

doi:10.1007/bf01586820

Cited by 37 publications

(21 citation statements)

References 19 publications

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“…According to our recently established point defect model for bulk AlN [4], the main transitions and their in- [6,12]). The 2.78 eV band is assumed to be caused by a transition from V Al to O N and should thus depend on the concentrations of both defects.…”

Section: Methodsmentioning

confidence: 99%

UV transparent single‐crystalline bulk AlN substrates

Bickermann

Epelbaum

Filip

et al. 2010

Phys. Status Solidi (c)

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Bulk aluminum nitride (AlN) is a very promising substrate material for UV optoelectronics, and its UV transparency is of high interest for UV devices designed to emit through the substrate. We report on 500 μm thick bulk AlN substrates with plain UV transmittance exceeding 50% (i.e., absorption coefficients below 14 cm–1) for wavelengths from 220 nm to 380 nm in the main wafer area. Comparing the spectra of different AlN bulk samples, four major below band‐gap absorption bands are identified and interpreted based on a point defect model for AlN crystals. We conclude that a further reduction of oxygen contamination of the source material led to a significant decrease of UV absorption in both colorless and yellowish areas of those substrates. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Methodsmentioning

confidence: 99%

UV transparent single‐crystalline bulk AlN substrates

Bickermann

Epelbaum

Filip

et al. 2010

Phys. Status Solidi (c)

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“…8 ' 10 and others. 7 ' 11 ' 17 The results of these studies have shown that an oxygen-related impurity level is created in the A1N optical band gap which can be readily observed in luminescence measurements.…”

Section: Introductionmentioning

confidence: 96%

“…7 ' 11 ' 17 The results of these studies have shown that an oxygen-related impurity level is created in the A1N optical band gap which can be readily observed in luminescence measurements. The origin of this luminescence peak has been assigned to donor-acceptor pair transitions by Pastrnak 10 and to transitions within the optical bandtail states by Harris and Youngman. 11 In each case, a broad, rather temperature insensitive luminescence peak is observed experimentally.…”

Section: Introductionmentioning

confidence: 98%

On the nature of the oxygen-related defect in aluminum nitride

1990

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The oxygen-related defect in an aluminum nitride (A1N) single crystal and in polycrystalline ceramics is investigated utilizing photoluminescence spectroscopy, thermal conductivity measurements, x-ray diffraction lattice parameter measurements, and transmission electron microscopy. The results of these measurements indicate that at oxygen concentrations near 0.75 at. %, a transition in the oxygen accommodating defect occurs. On both sides of this transition, simple structural models for the oxygen defect are proposed and shown to be in good agreement with the thermal conductivity and lattice parameter measurements, and to be consistent with the formation of various extended defects (e.g., inversion domain boundaries) at higher oxygen concentrations.

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“…It was found that position of the band maximum shifts to long wavelength with increase of oxygen concentration in the crystalline lattice of aluminum nitride. From papers of other authors [3][4][5], it follows that the UV-blue luminescence band is complex and consists of several subbands. In our previous works [6,7], we have found that the UV-blue band in luminescence spectra of AGL, TL, and OSL is shifted to the longer wavelengths compared to that in PL spectra of the same samples.…”

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confidence: 99%

“…Normalized PL spectra(1)(2)(3)(4) under laser excitation density: 1 -100%, 2 -13.7%, 3 -1.5%, 4 -0.5% and 5afterglow 5 s after excitation ceasing at 300 K (a) and 10 K (b).…”

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confidence: 99%

Recombination luminescence in aluminum nitride ceramics

Trinkler

Bērziņa

2013

Physica Status Solidi (b)

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Photoluminescence (PL) and afterglow luminescence (AGL) produced by UV laser irradiation with varied intensity were studied in AlN ceramics in the 10–300 K temperature range. Luminescence spectra of AlN ceramics contain the UV–blue band built up of two components – the UV (3.18 eV) and Blue (2.58 eV) bands, which are presumably ascribed to recombination luminescence involving oxygen‐related centers in the bulk and on the surface of AlN, correspondingly. It was found that position of the emission band maximum of AlN ceramics depends on such factors as excitation density, temperature, and delay time after excitation ceasing – in the case of AGL. In PL spectra, the excitation density growth produces the blue shift of the UV emission band peak, and temperature growth from 10 to 300 K causes first the blue and then the red shift. The most characteristic feature of the AGL is the red shift of the resultant UV–blue peak occurring with growth of delay time after excitation ceasing. Explanations of these phenomena are proposed basing on properties of radiative donor–acceptor pair recombination in semiconductors and varied relative contribution of the UV and Blue components to build‐up of the resultant UV–blue band.

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Luminescent properties of the oxygen impurity centres in A1N

Cited by 37 publications

References 19 publications

UV transparent single‐crystalline bulk AlN substrates

UV transparent single‐crystalline bulk AlN substrates

On the nature of the oxygen-related defect in aluminum nitride

Recombination luminescence in aluminum nitride ceramics

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