1980
DOI: 10.1021/ba-1980-0184.ch011
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Luminescent Properties of Semiconductor Photoelectrodes

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Cited by 6 publications
(7 citation statements)
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References 15 publications
(18 reference statements)
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“…The recombination current consists os a radiationless part and a radiative part, the latter being exceedingly small, however (21). essarily equal to 1 in this case, as surface recombination still might occur, as suggested by the quantum efficiencies in Fig.…”
Section: Correlation Between Quantum Yield and Output Stability--a Mo...mentioning
confidence: 74%
“…The recombination current consists os a radiationless part and a radiative part, the latter being exceedingly small, however (21). essarily equal to 1 in this case, as surface recombination still might occur, as suggested by the quantum efficiencies in Fig.…”
Section: Correlation Between Quantum Yield and Output Stability--a Mo...mentioning
confidence: 74%
“…Our early studies examined many of the phenomena observed for n-ZnO using n-CdS:Te electrodes (36)(37)(38). The selection of CdS:Te was made with the expectation that its PEC properties would mimic those for CdS, from which stable PEC's had been constructed, and that it would be very emissive at room temperature (39)(40)(41)(42)(43)(44).…”
Section: B N-cds:tementioning
confidence: 99%
“…Parallel shifts have also been reported for CdS:Te absorption and excitation spectra over subambient temperature ranges (13). These spectra incorporate a low-energy band which distinguishes CdS:Te from CdS and, in fact, masks the exact position of the CdS:Te band gap (7,8,11,12,13). Several other features of the CdS:Te emission spectrum are particularly relevant in the context of PEC experiments.…”
Section: '4mentioning
confidence: 99%
“…The photocurrent enhancement for 514.5 nm excitation is a predictable consequence of an absorption edge which red shifts with te.=perature: As the absorptivity for 514.5 nm light increases with temperature, progressively larger fractions of light will be absorbed in the depletion region. In this sense the accelerated decline in emission intensity observed for 514.5 n= relative to 501.7 nm excitation (Figure 1) may include a contribution reflecting decreasing optical penetration depth; weaker emission would be expected as 514.5 nm light acquires status as an ultraband gap wavelength, since near-surface nonradiative recombination sites could play a more significant role in excited-state deactivation (7,8).…”
Section: '4mentioning
confidence: 99%