Effects of Temperature on Excited-State Descriptions of Luminescent Photoelectrochemical Cells Employing Tellurium-Doped Cadmium Sulfide Electrodes

Luminescent Properties of Semiconductor Electrodes.

“…13 In concluding this section we note that all of the single-crystal n-Cd;XSel.X samples examined exhibit quenching of their PL intensity when used as PEC electrodes, as illustrated in Fig. 14; the extent of quenching and corresponding properties related to optical energy conversion are summarized in We examined both n-CdS:Te- (46,47,75) and n-CdSxSelX-based PEC's (52,53) for agreement with eq. [7].…”

“…The optical band gap temperature coefficient, dEg/dT, for undoped CdS of -5.2xi0 -4 eV/K (45) suggested that CdS:Te might absorb a larger fraction of 514.5-nm light in the depletion region if temperature were to be increased. These expectations were realized using a cell modified for variable-temperature work (46,47).…”