Luminescent Er doped microparticles in a semiconductor matrix

Favennec, P.N.; L'Haridon, H.; Moutonnet, D.; Salvi, M.; Papadopoulo, A. C.

doi:10.1049/el:19900999

Cited by 7 publications

(10 citation statements)

References 6 publications

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“…11 In addition, use of wide band gap semiconductors as the host material has been shown to reduce the thermal quenching of the characteristic intra-4f shell atomic transitions of the RE ions. [12][13][14] Consequently, III-N semiconductors doped with RE ions appear as promising material candidates for producing magnetic and optical functionalities on a single chip. In this letter, we report on the synthesis of Er-doped GaN by metal-organic chemical vapor deposition ͑MOCVD͒ and the resulting optical and magnetic properties of the thin films.…”

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confidence: 99%

“…In particular, transitions between the first excited manifold ͑ 4 I 13/2 ͒ and the ground state ͑ 4 I 15/2 ͒ give rise to IR emissions near 1.54 m. Due to the importance of this wavelength region for optical communications, Er doping of silica fibers, as well as various semiconductors, has received widespread research attention. [1][2][3][4][12][13][14][15][16][17][18][19] In addition, following Hund's rule, there are three unpaired 4f in Er atoms that can contribute to ferromagnetic ordering. Bang et al investigated the magnetic properties of GaN thin films doped with Er but did not observe definitive ferromagnetic behavior.…”

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confidence: 99%

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Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition

Zavada

Nepal

Ugolini

et al. 2007

Applied Physics Letters

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The authors report on the optical and magnetic properties of GaN epilayers, grown by metal-organic chemical vapor deposition, with in situ Er doping at concentrations up to ϳ10 21 cm −3. Using ultraviolet laser excitation, all samples exhibited photoluminescence near 1540 nm with the integrated intensity approximately proportional to the Er concentration. Data from superconducting quantum interference device measurements indicated room temperature ferromagnetic ordering in all Er-doped GaN epilayers. The saturation magnetization in these samples also followed a nearly linear fit to the Er concentration. X-ray diffraction spectra did not reveal evidence of any second phases over this range of Er concentrations.

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confidence: 99%

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confidence: 99%

Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition

Zavada

Nepal

Ugolini

et al. 2007

Applied Physics Letters

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“…Recent work on MBE epitaxy (4,5) or on ion implantation (6,7) showed the difficulty in incorporating high concentrations of erbium in the semiconductor matrix. In addition, we observed the creation of microparticles composed of erbium and oxygen by ion implantation in a semiconductor matrix (8). A cathodoluminescence study showed that the 1.54 ~m emission is due only to these microparticles.…”

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confidence: 92%

A Composite Layer of Al‐Er‐O Particles in a Silicon Matrix

Salvi¹,

L'Haridon²,

Favennec³

et al. 1991

J. Electrochem. Soc.

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Erbium is of particular interest in telecommunication systems because of its sharp and intense photoemission at 1.54 μm. However, erbium is difficult to incorporate at high concentrations in the semiconductor matrix and presents a tendency to segregate in the material. A better solution would be to use the erbium impurity as an element of the matrix rather than as a dopant. Such a structure can be obtained with a garnet‐like layer realized on a semiconductor substrate. Evaporation, implantation, and annealing techniques were combined to obtain a new ternary material Al‐Er‐O. These garnet‐like layers were developed on silicon. The layer composition as well as the interaction of the different elements with the substrate were studied by Rutherford backscattering, secondary ion mass spectroscopy, and X analyses. The surface aspect variations were observed by scanning electron microscopy. According to the annealing conditions, a photoluminescence at about 1.54 μm corresponding to erbium emission was observed at 77 K. This luminescence is due to insulating microparticles composed of aluminum, erbium, oxygen, and possibly silicon.

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“…If sufficient light emission can be obtained from rare-earth-doped semiconductors, monolithic optoelectronic devices will be realized and this will greatly simplify and reduce the cost of modern optical communication systems. 5 Recently visible and/or infrared emission has been obtained from a variety of erbium doped WBGS materials, such as SiC, 6 GaAs, 7 InP, 8 and GaN. 2,3 However, progress in Er-doped Si has been limited due to the low equilibrium solubility of Er in Si ͑ ϳ10 18 atoms/cm 3 ) and the thermal quenching effect.…”

Section: Introductionmentioning

confidence: 99%

Rare earth focused ion beam implantation utilizing Er and Pr liquid alloy ion sources

Chao

Lee

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Investigations on liquid alloy ion sources for rare-earth elements (abstract) Rev. Sci.We have developed procedures for the fabrication of Er-Ni and Pr-Pt liquid alloy ion sources ͑LAIS͒. Er 2ϩ beam with target current of ϳ100 pA and Pr 2ϩ beams with target current of ϳ200 pA were obtained, which correspond to 50% and 80% of the total target current, respectively. Both Er-Ni and Pr-Pt alloys oxidize quickly once exposed to air. Er-Ni source lifetimes were generally larger than 200 A h. The source lifetimes of Pr-Pt LAISs were approximately 30 A h, limited by oxide contamination and wettability problems. Visible photoluminescence has been observed from Er-or Pr-doped GaN, Al 2 O 3 , and ZBLAN glass using focused ion beam direct write implantation.

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Luminescent Er doped microparticles in a semiconductor matrix

Cited by 7 publications

References 6 publications

Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition

Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition

A Composite Layer of Al‐Er‐O Particles in a Silicon Matrix

Rare earth focused ion beam implantation utilizing Er and Pr liquid alloy ion sources

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