Luminescence quenching and the formation of the GaP1−<i>x</i>N<i>x</i> alloy in GaP with increasing nitrogen content

Baillargeon, J. N.; Cheng, K. Y.; Höfler, G. E.; Pearah, P. J.; Hsieh, K. C.

doi:10.1063/1.106906

Cited by 215 publications

(111 citation statements)

References 11 publications

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“…[9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] In this article, we show that the effect of nitrogen on the electronic band structure of dilute nitrides can be consistently described in terms of an anti-crossing interaction between localized nitrogen states and the extended conduction-band states of the semiconductor matrix. 6,27 The interaction leads to a significant modification of the band structure of the dilute III-N-V alloys.…”

Section: Introductionmentioning

confidence: 99%

Band anticrossing in dilute nitrides

Shan

Walukiewicz

et al. 2004

J. Phys.: Condens. Matter

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Alloying III-V compounds with small amounts of nitrogen leads to dramatic reduction of the fundamental band-gap energy in the resulting dilute nitride alloys. The effect originates from an anti-crossing interaction between the extended conduction-band states and localized N states.The interaction splits the conduction band into two nonparabolic subbands. The downward shift of the lower conduction subband edge is responsible for the N-induced reduction of the fundamental band-gap energy. The changes in the conduction band structure result in significant increase in electron effective mass and decrease in the electron mobility, and lead to a large enhance of the maximum doping level in GaInNAs doped with group VI donors. In addition, a striking asymmetry in the electrical activation of group IV and group VI donors can be attributed to mutual passivation process through formation of the nearest neighbor group-IV donor nitrogen pairs.

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Section: Introductionmentioning

confidence: 99%

Band anticrossing in dilute nitrides

Shan

Walukiewicz

et al. 2004

J. Phys.: Condens. Matter

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“…Dilute nitrides (oxides) in which column V (VI) atoms in a standard group III-V (II-VI) compounds are partially replaced with nitrogen (oxygen) are the most prominent and extensively studied HMAs [16][17][18][19][20][21].…”

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confidence: 99%

Engineering the Electronic Band Structure for Multiband Solar Cells

et al. 2011

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Using the unique features of the electronic band structure of GaN x As 1-x alloys, we have designed, fabricated and tested a multiband photovoltaic device. The device demonstrates an optical activity of three energy bands that absorb, and convert into electrical current, the crucial part of the solar spectrum. The performance of the device and measurements of electroluminescence, quantum efficiency and photomodulated reflectivity are analyzed in terms of the Band Anticrossing model of the electronic structure of highly mismatched alloys. The results demonstrate the feasibility of using highly mismatched alloys to engineer the semiconductor energy band structure for specific device applications.

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“…The most significant of which are a large reduction of the fundamental band gap and a change in the effective electron mass. [2][3][4][5][6] For example, a 0.18 eV reduction of the band gap has been observed in GaN x As 1-x at x=0.01. 6 Furthermore, a new extra optical transition E + from the valence band to the conduction band at the Γ point has been found.…”

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confidence: 99%

Band-gap bowing effects in BxGa1−xAs alloys

Shan

Walukiewicz

et al. 2003

Journal of Applied Physics

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Photo-modulation spectroscopy studies of the transitions at the Γ point of the Brillouin zone of thin films of B x Ga 1-x As alloys grown by metalorganic chemical vapor deposition are presented. A very small increase of the fundamental band gap is found in samples with B content up to 3%. Under hydrostatic pressure, the band gap increases at a rate almost identical to the pressure dependence of the GaAs band gap. In contrast to the case of N incorporation at similar concentrations into GaAs, the experimental results show that B incorporation does not cause large modifications of the conduction band structure in B x Ga 1-x As alloys.

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Luminescence quenching and the formation of the GaP1−xNx alloy in GaP with increasing nitrogen content

Cited by 215 publications

References 11 publications

Band anticrossing in dilute nitrides

Band anticrossing in dilute nitrides

Engineering the Electronic Band Structure for Multiband Solar Cells

Band-gap bowing effects in BxGa1−xAs alloys

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