We present intermediate-band solar cells manufactured using quantum dot technology that show for the first time the production of photocurrent when two sub-band-gap energy photons are absorbed simultaneously. One photon produces an optical transition from the intermediate-band to the conduction band while the second pumps an electron from the valence band to the intermediate-band. The detection of this two-photon absorption process is essential to verify the principles of operation of the intermediate-band solar cell. The phenomenon is the cornerstone physical principle that ultimately allows the production of photocurrent in a solar cell by below band gap photon absorption, without degradation of its output voltage.

Using the unique features of the electronic band structure of GaN x As 1-x alloys, we have designed, fabricated and tested a multiband photovoltaic device. The device demonstrates an optical activity of three energy bands that absorb, and convert into electrical current, the crucial part of the solar spectrum. The performance of the device and measurements of electroluminescence, quantum efficiency and photomodulated reflectivity are analyzed in terms of the Band Anticrossing model of the electronic structure of highly mismatched alloys. The results demonstrate the feasibility of using highly mismatched alloys to engineer the semiconductor energy band structure for specific device applications.

A general model to describe the operation of intermediate band solar cells (IBSCs), incorporating a significant number of physical effects such as radiative coupling between bands, and impact ionization and Auger recombination mechanisms, is presented in equivalent circuit form. The model is applied to IBSC prototypes fabricated from InAs quantum dots structures to determine the value of the circuit elements involved. The analysis shows evidence of splitting between the conduction and intermediate band quasi-Fermi levels, one of the fundamental working hypotheses on which operation of the IBSC depends. The model is also used to discuss the limitations and potential of this type of cell.

The characteristics of intermediate band solar cells containing 10, 20, and 50 InAs quantum dot (QD) layers embedded in otherwise “standard” (Al,Ga)As solar cell structures have been compared. The short-circuit current densities of the cells decreased and the quantum efficiencies of the devices showed a concomitant reduction in the minority carrier lifetime in the p emitters with increasing number of QD layers. Dislocations threading up from the QDs toward the surface of the cells, and revealed by bright field scanning transmission electron microscopy, are the most likely cause of the deterioration in the electrical performance of the cells.