Luminescence properties of Ga-graded Cu(In,Ga)Se2 thin films

Haarstrich, J.; Metzner, H.; Ronning, Carsten; Undisz, Andreas; Rissom, T.; Kaufmann, Christian A.; Schock, Hans‐Werner

doi:10.1016/j.tsf.2011.12.012

Cited by 6 publications

(3 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…One way to improve the optoelectronic properties of a solar cell is by introducing concentration gradients in the absorber in order to enhance the collection efficiency and to reduce recombination processes [51][52][53][54][55][56]. The influence of concentration gradients on the band diagram is shown for back and front surface grading in figure 2.11.…”

Section: Band Gap Grading In Cigsse Solar Cellsmentioning

confidence: 99%

Improvement of Cu ( In,Ga) (S,Se)2 thin film Solar Cells with the help of Gallium and Sulfur Gradients

Müller¹

2018

View full text Add to dashboard Cite

Das Ziel der Arbeit besteht darin, optimierte Absorber für das Dünnschicht Solarzellensystem Cu(In,Ga)(S,Se)2 mit Hilfe von industrienahen Prozessen herzustellen. Der industrienahe zweistufige Herstellungsprozess beinhaltet das Aufbringen von metallischen Vorläuferschichten (Kathoden zerstäubung & thermische Verdampfung) und die Bildung des Chalkopyrit Absorbers in Folge des thermischen Ausheizschrittes. Der gezielte Einbau von Konzentrationsgradienten bestehend aus Ga/In und Se/S wird werkstoffseitig am Absorber strukturell analysiert und für die elektronischen Eigenschaften der Solarzelle optimiert. Zur Justage des Ga/In Profils werden sowohl das optimierte Temperaturprofil als auch ein Überangebot an Chalkogenen verwendet. Für die Einstellung des Se/S Profils im Chalkopyrit dienen das Ausgangsverhältnis sowie ein nachträglicher S Einbau (Erweiterung auf einen drei-stufigen Prozess). Um den Rückkontakt der Solarzelle vor den aggressiven Chalkogenen während des Prozesse...

show abstract

Section: Band Gap Grading In Cigsse Solar Cellsmentioning

confidence: 99%

Improvement of Cu ( In,Ga) (S,Se)2 thin film Solar Cells with the help of Gallium and Sulfur Gradients

Müller¹

2018

View full text Add to dashboard Cite

show abstract

“…Therefore, the spatial resolution strongly depends on the acceleration voltage of the microscope. Cathodoluminescence in cross-section geometry shows the depth profile of the emission energy depending on the bandgap profile [9]. Additionally, local inhomogeneities can be localized and correlated to the morphology seen in SEM images.…”

Section: Introductionmentioning

confidence: 97%

High lateral resolution energy dispersive X-ray spectroscopy and cathodoluminescence on lamellae of CIGSe solar cells

Schönherr

Tille

Schöppe

et al. 2014

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

View full text Add to dashboard Cite

The spatial resolution of conventional measurement geometries for energy dispersive X-ray spectroscopy and cathodoluminescence is limited by the excitation volume. For Cu(In,Ga)Se 2 solar cells high acceleration voltages up to 30 kV are needed to excite the K-shell of the investigated elements. As a consequence, the expansion of the excitation volume is in the magnitude of the layer thickness. Hence, thin lamellae were prepared with a focused ion beam and thinned out to a specimen thickness down to 50 nm. As a result, the spatial resolution was increased up to 25 nm, because the excitation volume is limited by the thickness of the lamellae and in first approximation only depends on the diameter of the electron beam. Highly resolving EDS measurements were performed to determine the gallium profile in the Cu(In,Ga)Se 2 absorber and the expected behavior was verified. Furthermore, cathodoluminescence images were taken of the lamellae and the determined grain structure was compared with the structure measured via scanning transmission electron microscope.Index Terms -cathodoluminescence (CL), EDS, Cu(In,Ga)Se 2 (CIGS) , lamellae, photovoltaic, thin film solar cells.

show abstract

“…The band gap is feasible to be tuned by changing the Ga to In ratio. By varying this ratio, the conduction band position is changed, while the valence band remains mainly unaffected, resulting an increase in the band gap which is discussed to be advantageous for solar cell performance . Furthermore, low cost fabrication of these thin films makes them useful for industrial mass production compared to silicon solar cell.…”

Section: Introductionmentioning

confidence: 99%

Optimized annealing regime of CuGaSe₂nanoparticles prepared by solvothermal method

Zahedifar

Ghanbari

Moradi

et al. 2014

Phys. Status Solidi A

View full text Add to dashboard Cite

The single phase CGS nanoparticles were synthesized by solvothermal method. The optimal annealing regime of synthesis stage was determined as 180 °C for 12 h followed by an extra annealing at 230 °C for 12 h. The phase improvements were studied using X‐ray diffraction (XRD) patterns. Grain size ranging from 20–50 nm was obtained by SEM and TEM images and confirmed by Scherrer's formula. Band gap of 2.48 eV and a broad PL spectrum peaking at 3.16 eV were resulted respectively from studies on UV‐Visible absorption and photoluminescence (PL) patterns of the synthesized nanoparticles.

show abstract

Luminescence properties of Ga-graded Cu(In,Ga)Se2 thin films

Cited by 6 publications

References 27 publications

Improvement of Cu ( In,Ga) (S,Se)2 thin film Solar Cells with the help of Gallium and Sulfur Gradients

Improvement of Cu ( In,Ga) (S,Se)2 thin film Solar Cells with the help of Gallium and Sulfur Gradients

High lateral resolution energy dispersive X-ray spectroscopy and cathodoluminescence on lamellae of CIGSe solar cells

Optimized annealing regime of CuGaSe₂nanoparticles prepared by solvothermal method

Contact Info

Product

Resources

About

Luminescence properties of Ga-graded Cu(In,Ga)Se2 thin films

Cited by 6 publications

References 27 publications

Improvement of Cu ( In,Ga) (S,Se)2 thin film Solar Cells with the help of Gallium and Sulfur Gradients

Improvement of Cu ( In,Ga) (S,Se)2 thin film Solar Cells with the help of Gallium and Sulfur Gradients

High lateral resolution energy dispersive X-ray spectroscopy and cathodoluminescence on lamellae of CIGSe solar cells

Optimized annealing regime of CuGaSe2nanoparticles prepared by solvothermal method

Contact Info

Product

Resources

About

Optimized annealing regime of CuGaSe₂nanoparticles prepared by solvothermal method