Luminescence properties of CdTe-based solid solutions in the CdTe-Ga2Te3 and CdTe-GaTe systems

Один, И. Н.; Чукичев, М. В.; Гапанович, М. В.; Новиков, Г. Ф.

doi:10.1134/s0020168511060173

Cited by 3 publications

(3 citation statements)

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“…Thus, we could determine the parameters of melting and crystallization, which allow us to investigate supercooling versus superheating dependences (figs. 3,4). We can see from Fig.…”

Section: Resultsmentioning

confidence: 76%

“…Cadmium manganese telluride Cd 1-x Mn x Te (CMT) is a promising new material for high-efficiency X-ray and gamma detectors operating at room temperature. CMT is also known as a diluted magnetic semiconductor suitable for optical isolators, solar cells, and lasers due to its wide tunable band gap, high mobility of free carriers, high resistivity, and exceptional electronic transport properties [1][2][3][4]. According to the CdTe-MnTe melt diagram, the liquidus temperature does not change very much with composition from x = 0 to 0.75, and a two-phase area is narrow up to x = 0.5 [5].…”

Section: Introductionmentioning

confidence: 99%

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Melting and crystallization peculiarities of Cd0.50Mn0.50Te solid solutions

Kopach¹,

Kopach²,

Fochuk³

et al. 2023

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXV

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We investigated melting and crystallization processes of Cd0.50Mn0.50Te. Using differential thermal analysis (DTA) we studied the solid-liquid equilibrium temperature range, the temperature dependence of the volume fraction of the solid phase in the melt, and crystallization peculiarities. We observed that changing a dwell temperature from 1346 to 1354 K results in an increase of the crystallization temperature of the Cd0.50Mn0.50Te melt. Since the melt is in a semiliquid state, its crystallization occurs over a solid-phase domain. It was found that a slightly overheated Cd0.50Mn0.50Te melt (up to 10 K) crystallizes more slowly than more overheated melts, and that the Cd0.50Mn0.50Te solid solutions are in a semi-liquid state in the temperature range of 1338-1354 K.

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“…Thus, we could determine the parameters of melting and crystallization, which allow us to investigate supercooling versus superheating dependences (figs. 3,4). We can see from Fig.…”

Section: Resultsmentioning

confidence: 76%

Section: Introductionmentioning

confidence: 99%

Melting and crystallization peculiarities of Cd0.50Mn0.50Te solid solutions

Kopach¹,

Kopach²,

Fochuk³

et al. 2023

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXV

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“…In Ref. , the cathodoluminescence (CL) of the solid solution obtained by annealing at 1010 K of the mixture consisting of CdTe and small amounts of GaTe (concentrations <0.2 mol.%). The CL spectrum, at 78 K, of the solid solution with 0.05 mol.% GaTe contains two bands with maxima at 1.560 and 1.420 eV.…”

Section: Resultsmentioning

confidence: 99%

Photoelectric and photoluminescence properties of CdTe–GaTe composite

Caraman

Spalatu

Evtodiev

et al. 2016

Physica Status Solidi (b)

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A GaTe-CdTe composite was obtained by thermal treatment at 1020 K of GaTe single crystals in Cd vapor atmosphere. The composite photoluminescence, photoconductivity, and composition are studied in this work. The photosensitivity and photoluminescence band structure are determined for both the primary crystals and the composite. The CdTe crystallites create, in the GaTe bandgap, recombination and trapping levels, which determine the structure of the photoluminescence spectra and the spectral range of composite photosensitivity. The photoluminescence spectrum of the composite at 80 K contains characteristic bands of both composite components, GaTe and CdTe. From the analysis of thermally stimulated luminescence curves, the energies of the electron trapping levels in the composite are determined.

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