Luminescence of silicon nitride films implanted with nitrogen ions

Власукова, Л. А.; Пархоменко, И. Н.; Комаров, Ф. Ф.; Аkilbekov, A.; Murzalinov, Danatbek; Mudryi, A. V.; Ryabikin, Yu. A.; Romanov, I. A.; Giniyatova, Sh.; Dauletbekova, А.

doi:10.1088/2053-1591/aad7a6

Cited by 7 publications

(4 citation statements)

References 21 publications

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“…A chemical synthesis that produces a colloidal dispersion with reasonable size control is one of the most widely used techniques [100,218,219] , b) [220][221][222] , c) [222][223][224] , d) [225,226] , e) [227] , f ) [228] , g) [229] , h) [230] , i) [231] , j) [232] , k) [233] , l) [234] , m) [235] , n) [236] .…”

Section: Embedding Qds and Nps In Thin-film Matrices And Their Relati...mentioning

confidence: 99%

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Silicon Compound Nanomaterials: Exploring Emission Mechanisms and Photobiological Applications

Dutt,

Salinas,

Martínez-Tolibia

et al. 2023

Advanced Photonics Research

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After the first visible photoluminescence (PL) from porous silicon (pSi), continuous efforts are made to fabricate Si‐based compound nanomaterials embedded in matrices such as oxide, nitride, and carbide to improve optical performance and industrial acceptability. These nanomaterials’ functional and desired properties (nanoparticles and quantum dots embedded in matrices) can vary significantly when embedded in technologically relevant matrices. However, exploring the exact emission mechanisms is one of the remaining challenges from the past few decades. To cover this gap, this review discusses the morphological and optoelectronic properties of Si‐based compound nanomaterials and their correlation with the quantum confinement effect and different surface states to find precise emission mechanisms. One of the biggest challenges of using silicon nanomaterials in the biological sector is the development of sensitive materials of low/acceptable toxicity for identifying target analytes either inside/outside the biological platforms. In this scenario, silicon‐based compound matrices can offer different characteristics and advantages depending on their size configurations and PL emission mechanisms. On the other hand, a proper understanding of these multifaceted silicon nanomaterials’ optical properties (emission mechanisms) can be exploited for pathogen detection and in situ applications in cells and tissues, embarking on a new era of bioimaging technology.

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Section: Embedding Qds and Nps In Thin-film Matrices And Their Relati...mentioning

confidence: 99%

“…Schematic summary of the main configurations of Si-based nanomaterials based on deposition techniques and their applications. References are numbered as indicated: a)[100,218,219] , b)[220][221][222] , c)[222][223][224] , d)[225,226] , e)[227] , f )[228] , g)[229] , h)[230] , i)[231] , j)[232] , k)[233] , l)[234] , m)[235] , n)[236] .…”

mentioning

confidence: 99%

Silicon Compound Nanomaterials: Exploring Emission Mechanisms and Photobiological Applications

Dutt,

Salinas,

Martínez-Tolibia

et al. 2023

Advanced Photonics Research

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“…The films are subsequently implanted with N and subjected to rapid thermal annealing (RTA) at 1200 °C for 3 min, resulting in increased luminescence in the bluegreen region. 33,44,58 • Pentachlorodisilane (PCDS, HCl 2 SiSiCl 3 ), which in one instance is reacted with (NH 3 + H 2 ) at 800 °C-1400 °C to grow practically H-free and stoichiometric SiN 1.33 . Films were amorphous up to 1000 °C and crystalline α-Si 3 N 4 at 1200 °C and above.…”

Section: Solar Cells and Optical Waveguidesmentioning

confidence: 99%

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: State-of-the-Art Processing Technologies, Properties, and Applications

Kaloyeros¹,

Pan

Goff

et al. 2020

ECS J. Solid State Sci. Technol.

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Accelerating interest in silicon nitride thin film material system continues in both academic and industrial communities due to its highly desirable physical, chemical, and electrical properties and the potential to enable new device technologies. As considered here, the silicon nitride material system encompasses both non-hydrogenated (SiNx) and hydrogenated (SiNx:H) silicon nitride, as well as silicon nitride-rich films, defined as SiNx with C inclusion, in both non-hydrogenated (SiNx(C)) and hydrogenated (SiNx:H(C)) forms. Due to the extremely high level of interest in these materials, this article is intended as a follow-up to the authors’ earlier publication [A. E. Kaloyeros, F. A. Jové, J. Goff, B. Arkles, Silicon nitride and silicon nitride-rich thin film technologies: trends in deposition techniques and related applications, ECS J. Solid State Sci. Technol., 6, 691 (2017)] that summarized silicon nitride research and development (R&D) trends through the end of 2016. In this survey, emphasis is placed on cutting-edge achievements and innovations from 2017 through 2019 in Si and N source chemistries, vapor phase growth processes, film properties, and emerging applications, particularly in heterodevice areas including sensors, biointerfaces and photonics.

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“…Moreover, by varying the growth conditions, stronger light emission in a wide spectral range from UV to IR can result in SiN films [9,10]. Additionally, even though the physical mechanism that gives rise to the emission of light in SiN films has not been clarified yet, control over the Si nitride films by a doping process using nitrogen atoms by ion-implantation (which is a fully CMOS compatible technique) has been reported [11]. On the other hand, Si-rich silicon nitride has also been reported to present enhanced Kerr nonlinearity with respect to the standard stoichiometric Si 3 N 4 materials [6,8,[12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Driving Third-Order Optical Nonlinearities in Photoluminescent Si Nanoparticles by Nitrogen Co-Implantation in a Silica Matrix

et al. 2022

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The photoluminescence and third-order nonlinear optical effects of co-implanted silicon nanoparticles and nitrogen ions in a silica matrix were studied. Experimental evidence shows the potential of nitrogen ions for changing optical properties exhibited by silicon nanoparticles implanted in an integrated system. The modification of the optical bandgap and photoluminescent intensity in the studied nanomaterials by the incorporation of nitrogen was analyzed. Standard two−wave mixing experiments were conducted using nanosecond and picosecond laser pulses at 532 nm wavelength. At this off-resonance condition, only multiphoton excitation can promote electrons at energies above the optical bandgap of the silicon nanoparticles. The picosecond results show that the co-implanted sample with nitrogen exhibits a three-fold enhancement of the nonlinear Kerr response. Femtosecond z-scan measurements were undertaken at 800 nm in order to explore the modification of the ultrafast nonlinear response of the samples that revealed a purely electronic Kerr nonlinearity together to saturable absorption of the SiNPs in the near-infrared. Remarkably, femtosecond results reveal that nitrogen co-implantation in the SiNPs system derives from the quenching of the third-order nonlinear optical behavior. These findings pointed out a simple approach for engineering the optical bandgap of nanocomposites, which can be controlled by a doping process based on ion-implanted nitrogen. It is highlighted that the enhanced light-matter interactions induced by nitrogen implantation can be useful for developing nonlinear integrated silicon photonics nanodevices with low power excitation.

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Luminescence of silicon nitride films implanted with nitrogen ions

Cited by 7 publications

References 21 publications

Silicon Compound Nanomaterials: Exploring Emission Mechanisms and Photobiological Applications

Silicon Compound Nanomaterials: Exploring Emission Mechanisms and Photobiological Applications

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: State-of-the-Art Processing Technologies, Properties, and Applications

Driving Third-Order Optical Nonlinearities in Photoluminescent Si Nanoparticles by Nitrogen Co-Implantation in a Silica Matrix

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