Luminescence of N-Implanted In_0.32Ga_0.68P Grown by Liquid-Phase Epitaxy

Abstract

The photoluminescence spectra of N-implanted In0.32Ga0.68P epitaxial layers grown on GaAs0.61P0.39 substrates by liquid-phase epitaxy have been investigated at different annealing temperatures and times by the rapid thermal annealing technique. The nitrogen level is located ∼110 meV below the Γ-band minimum for the In0.32Ga0.68P crystal. The activation energy necessary to place N atoms into sites to form the N-isoelectronic trap is 0.47 and 0.48 eV in Ar and N2 ambients, respectively. The optimum post-implantation annealing condition to obtain the maximum isoelectronic trap emission intensity is at 800°C for 30-s duration in both Ar and N2 ambients.