1992
DOI: 10.1143/jjap.31.2660
|View full text |Cite
|
Sign up to set email alerts
|

Luminescence of N-Implanted In0.32Ga0.68P Grown by Liquid-Phase Epitaxy

Abstract: The photoluminescence spectra of N-implanted In0.32Ga0.68P epitaxial layers grown on GaAs0.61P0.39 substrates by liquid-phase epitaxy have been investigated at different annealing temperatures and times by the rapid thermal annealing technique. The nitrogen level is located ∼110 meV below the Γ-band minimum for the In0.32Ga0.68P crystal. The activation energy necessary to place N atoms into sites to form the N-isoelectronic trap is 0.47 and 0.48 eV in Ar and N2 ambients, respectively. The optimum post-implanta… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Year Published

1993
1993
1993
1993

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
references
References 32 publications
0
0
0
Order By: Relevance