Photoluminescence properties of N-implanted Al0.30Ga0.70As0.62P0.38 alloy grown on GaAs0.61P0.39 substrates

Abstract

Luminescence data are presented on nitrogen-implanted Al0.30Ga0.70As0.62P0.38 epitaxial layers, which are grown on GaAs0.61P0.39 substrates by liquid-phase epitaxy, with different annealing temperatures by the rapid thermal annealing technique. Except for the four emission peaks observed from undoped AlGaAsP layers, involving near-band-to-band, donor-to-valence-band, conduction-band-to-acceptor, and donor-acceptor-pair transitions, we also observe the recombinations from the NΓ, N′Γ, and Nx states associated with the nitrogen isoelectronic impurity in the N-implanted AlGaAsP layer. The existence of such states has been predicted by a theory of the N trap that includes both the long- and short-range characters of isoelectronic impurity potential in III-V alloys. The states NΓ and N′Γ are observed to lie below the Γ conduction-band minimum by 24 and 16 meV, respectively. The Nx state is associated with indirect emission and is below the Γ conduction-band minimum by 34 meV. This is a report on the luminescence study of N-implanted AlGaAsP alloy.