Luminescence in Eu 2+ -doped Ba 2 Si 5 N 8 : fluorescence, thermoluminescence, and upconversion

Höppe, Henning A.; Lutz, H.; Morys, Peter; Schnick, Wolfgang; Seilmeier, A.

doi:10.1016/s0022-3697(00)00194-3

Cited by 504 publications

(443 citation statements)

References 21 publications

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“…Höppe et al [20] observed two emission bands with maxima at 610 and 630 nm in Eu 2+ -doped Ba 2 Si 5 N 8 under excitation with intense laser light at 1.047 m. They are attributed to two crystallographic Eu 2+ sites in the channels along [100].…”

Section: Resultsmentioning

confidence: 99%

The z value dependence of photoluminescence in Eu2+-doped β-SiAlON (Si6−zAlzOzN8−z) with 1≤z≤4

Zhu

Masubuchi

Motohashi

et al. 2010

Journal of Alloys and Compounds

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Eu 2+ -doped -SiAlON (Si 6-z Al z O z N 8-z ) phosphors with 1  z  4 were synthesized by gas pressure sintering. The emission spectra exhibit two broad bands with maxima at about 415 nm (violet) and 540 nm (green) under ultraviolet excitation. The green emission is dominant at z  2, while the violet emission becomes dominant at z > 2. The combination of two emission bands in a compound could lead to a white emission in Eu 2+ -doped -SiAlON with 2 < z  3.

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Section: Resultsmentioning

confidence: 99%

The z value dependence of photoluminescence in Eu2+-doped β-SiAlON (Si6−zAlzOzN8−z) with 1≤z≤4

Zhu

Masubuchi

Motohashi

et al. 2010

Journal of Alloys and Compounds

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“…These materials are much more stable than the aforementioned sulfides and show a high quantum efficiency, which has led to extensive research into their use as conversion phosphors in white LEDs [11,12,[18][19][20][21][22][23][24][25][26][27][28]. Recently, orange and reddish persistent luminescence was reported in these compounds, most notably in Ca 2 Si 5 N 8 :Eu,Tm [10,13,14,18,29,30]. Key parameters for the steady-state photoluminescence and the persistent luminescence of M 2 Si 5 N 8 :Eu(,Tm) are given in Table 1. A great advantage of these Eu 2+ -doped nitride materials is their very broad excitation spectrum, extending well into the visible range.…”

Section: Introductionmentioning

confidence: 99%

Temperature and wavelength dependent trap filling in M2Si5N8:Eu (M=Ca, Sr, Ba) persistent phosphors

Smet¹,

Eeckhout²,

Bos³

et al. 2012

Journal of Luminescence

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The evaluation of persistent phosphors is often focused on the processes right after the excitation, namely on the shape of the afterglow decay curve and the duration of the afterglow, in combination with thermoluminescence glow curve analysis. In this paper we study in detail the trap filling process in europium-doped alkaline earth silicon nitrides (Ca 2 Si 5 N 8 :Eu, Sr 2 Si 5 N 8 :Eu and Ba 2 Si 5 N 8 :Eu), i.e., how the persistent luminescence can be induced. Both the temperature at which the phosphors are excited and the spectral distribution of the excitation light on the ability to store energy in the phosphors' lattices are investigated. We show that for these phosphors this storage process is thermally activated upon excitation in the lower 5d excited states of Eu 2+ , with the lowest thermal barrier for europium doped Ca 2 Si 5 N 8 . Also, the influence of co-doping with thulium on the trap filling and afterglow behavior is studied. Finally there exists a clear relation between the luminescence quenching temperature and the trap filling efficiency. The latter relation can be utilized to select new efficient 5d-4f based afterglow phosphors. 2 Center for Nano-and Biophotonics (NB-Photonics), Ghent University, Belgium.

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“…Higher condensed siones are known to be highly covalent and stable towards oxidation and hydrolysis [3]. The SrSi 2 O 2 N 2 host lattice we are about to report was developed in a synthesis approach that earlier led to efficient nitridosilicate phosphors M 2 Si 5 N 8 :Eu 2+ (M ¼ Sr, Ba) [4][5][6]. The strong interest in this class of novel materials is reflected by a number of publications in the last few years on the system Ln-Si-O-N (Ln ¼ La, Gd, Y) in general [7] and the title compound in detail [8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Luminescence properties of SrSi2O2N2 doped with divalent rare earth ions

Bachmann

Jüstel

Meijerink

et al. 2006

Journal of Luminescence

222

158

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The optical properties of SrSi 2 O 2 N 2 doped with divalent Eu 2+ and Yb 2+ are investigated. The Eu 2+ doped material shows efficient green emission peaking at around 540 nm that is consistent with 4f 7 -4f 6 5d transitions of Eu 2+ . Due to the high quantum yield (90%) and high quenching temperature (4500 K) of luminescence, SrSi 2 O 2 N 2 :Eu 2+ is a promising material for application in phosphor conversion LEDs. The Yb 2+ luminescence is markedly different from Eu 2+ and is characterized by a larger Stokes shift and a lower quenching temperature. The anomalous luminescence properties are ascribed to impurity trapped exciton emission. Based on temperature and time dependent luminescence measurements, a schematic energy level diagram is derived for both Eu 2+ and Yb 2+ relative to the valence and conduction bands of the oxonitridosilicate host material. r

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Luminescence in Eu 2+ -doped Ba 2 Si 5 N 8 : fluorescence, thermoluminescence, and upconversion

Cited by 504 publications

References 21 publications

The z value dependence of photoluminescence in Eu2+-doped β-SiAlON (Si6−zAlzOzN8−z) with 1≤z≤4

The z value dependence of photoluminescence in Eu2+-doped β-SiAlON (Si6−zAlzOzN8−z) with 1≤z≤4

Temperature and wavelength dependent trap filling in M2Si5N8:Eu (M=Ca, Sr, Ba) persistent phosphors

Luminescence properties of SrSi2O2N2 doped with divalent rare earth ions

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