Luminescence from monolayer-thick Ge quantum wells embedded in Si

Engvall, Jesper; Olajos, Janos; Grimmeiss, H. G.; Kibbel, H.; Presting, H.

doi:10.1103/physrevb.51.2001

Cited by 35 publications

(9 citation statements)

References 13 publications

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“…The realisation of an electrically driven device would represent an important technological breakthrough [8]. The main routes pursued so far with relevance for optical interconnects are based on (i) porous silicon emitting in the infrared to visible spectral range depending on its processing history [9][10][11][12], (ii) Si nanocrystals in silicon dioxide emitting in the red to blue spectral range [3,13,14], (iii) erbium (Er 3+ )-doped silicon [15][16][17][18] or Er 3+ in SiO 2 sensitised by Si nanoclusters [7] emitting at 1.5 µm corresponding to a 4f intra-shell transition of the Er 3+ ions, (iv) SiGe heterostructures and quantum dots exploring effects of quantum confinement [19][20][21][22] and (v) band-toband recombination in Si pn diodes [4][5][6]23]. In this paper we focus on the last approach, since it is fully compatible with standard ULSI process technology.…”

Section: Introductionmentioning

confidence: 99%

Light-emitting silicon pn diodes

Dekorsy

Sun

Skorupa

et al. 2004

Applied Physics A: Materials Science & Processing

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We report on the electrical and optical characteristics of silicon light-emitting pn diodes. The diodes are prepared by ion implantation of boron at high doses and subsequent hightemperature annealing. Under forward bias, the diodes emit infrared electroluminescence closely below the band gap of bulk Si. We present a rate-equation model for bound excitons, free excitons and free carriers which successfully describes the electrical and optical behaviour of the diodes at low temperatures. Especially, an electrical bistability observed below 50 K is shown to be based on the interplay of bound excitons, free excitons and free carriers in the active area of the diodes. The ionisation of bound excitons is the origin of an improved electroluminescence from the diodes at higher lattice temperatures.PACS 78.60.Fi; 78.55.Ap; 71.55.Cn

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Section: Introductionmentioning

confidence: 99%

Light-emitting silicon pn diodes

Dekorsy

Sun

Skorupa

et al. 2004

Applied Physics A: Materials Science & Processing

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“…Also here an improved photo-and electroluminescence was observed [6], but still the efficiency was quenched significantly for higher temperatures up to 300 K.…”

Section: Introductionmentioning

confidence: 85%

Efficient light emitting diodes based on nanoscale silicon

Helm

Sun

Potfajova

et al. 2005

phys. stat. sol. (c)

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PACS 61.72 Tt, 78.60.Fi, 78.67.Bf, 85.60.Jb After giving an overview about various approaches for silicon based light emitters, we will present our results on Si light emitting diodes prepared by high-dose boron implantation. The electroluminescence (EL) increases with temperature, resulting in a wall-plug efficiency of 0.1% at room temperature. Extensive low-temperature EL measurements allow us to put forward a model, which is based on the interplay between free excitons/carriers and excitons localized at nanoscale boron doping spikes. Finally, we demonstrate an electrically driven resonant-cavity LED based on silicon.

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“…However, both the PL and the electroluminescence (EL) from such structures is basically quenched at room temperature primarily due to dissociation of the excitons and subsequent recombination of carriers at heterointerfaces or defects (Menczigar et al, 1992;Presting et al, 1992a). EL structures operating at room temperature have been reported (Engvall et al, 1993(Engvall et al, , 1995, but all the same, the infrared light emission is still quite weak. Results obtained more recently for a p-i-n diode based on a Si/Ge wavy superlattice quote an internal quantum efficiency of just ~10 −5 at 300 K .…”

Section: Quantum Wellsmentioning

confidence: 99%

Si/SiGe Heterointerfaces in One-, Two-, and Three-Dimensional Nanostructures: Their Impact on SiGe Light Emission

Lockwood

Baribeau

et al. 2016

Front. Mater.

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Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide-semiconductor (CMOS) integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled Si/Si1−xGex nanostructures (NSs), which can emit light at wavelengths within the important optical communication wavelength range of 1.3-1.55 μm, are already compatible with standard CMOS practices. However, the expected long carrier radiative lifetimes observed to date in Si and Si/Si1−xGex NSs have prevented the attainment of efficient light-emitting devices, including the desired lasers. Thus, the engineering of Si/ Si1−xGex heterostructures having a controlled composition and sharp interfaces is crucial for producing the requisite fast and efficient photoluminescence (PL) at energies in the range of 0.8-0.9 eV. In this paper, we assess how the nature of the interfaces between SiGe NSs and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in three dimensions (corresponding to the case of quantum dots), two dimensions (corresponding to quantum wires), and one dimension (corresponding to quantum wells). The interface sharpness is influenced by many factors, such as growth conditions, strain, and thermal processing, which in practice can make it difficult to attain the ideal structures required. This is certainly the case for NS confinement in one dimension. However, we demonstrate that axial Si/Ge nanowire (NW) heterojunctions (HJs) with a Si/ Ge NW diameter in the range 50-120 nm produce a clear PL signal associated with bandto-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, the experiments outlined here show that two quite different Si1−xGex NSs incorporated into a Si0.6Ge0.4 wavy superlattice structure display PL of high intensity while exhibiting a characteristic decay time that is up to 1000 times shorter than that found in conventional Si/SiGe NSs. The non-exponential PL decay found experimentally in Si/SiGe NSs can be interpreted as resulting from variations in the separation distance between electrons and holes at the Si/SiGe heterointerface. The results demonstrate that a sharp Si/SiGe heterointerface acts to reduce the carrier radiative recombination lifetime and increase the PL quantum efficiency, which makes these SiGe NSs favorable candidates for future light-emitting device applications in CMOS technology.

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Luminescence from monolayer-thick Ge quantum wells embedded in Si

Cited by 35 publications

References 13 publications

Light-emitting silicon pn diodes

Light-emitting silicon pn diodes

Efficient light emitting diodes based on nanoscale silicon

Si/SiGe Heterointerfaces in One-, Two-, and Three-Dimensional Nanostructures: Their Impact on SiGe Light Emission

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