Luminescence from indented Te-doped GaSb crystals

Abstract

Cathodoluminescence in the scanning electron microscope has been used to investigate the effect of plastic deformation, produced by indentation, in Te-doped GaSb crystals. Deformation has been found to cause a strong quenching of the luminescence emission as well as spectral changes. In particular, the decrease of the near band edge emission is accompanied by the relative increase of the defect band A and of the 730 meV band related to the V Ga Ga Sb Te Sb centres. Annealing treatments up to 600 • C lead to partial recovery of the deformation induced defects, and reveal the existence of Te out-diffusion processes from the deformed areas.

Sulfur Passivation of GaAsSb alloy layer Surfaces: Comparison of Ammonium Sulfide and Disulfur Dichloride Solutions

“…Then, the PL intensity decreased with the passivation extending. It is due to forming a thick sulfur ato mic layer to reduce the recombination centers of excit ions [19,20]. As shown in the Fig.…”

Solidification features of cast and vertically fed Te-doped GaSb materials

“…This invariance of the CL spectral response significantly differs from the results obtained for LC-Te ingots, where CL spectra strongly depend on the longitudinal and/or radial position [12] examined. In fact, up to three emission bands occurring in the range 741-748, 731-737 and 722-725 meV have been previously reported in luminescence studies of Te-doped GaSb [19,20]. Such bands involve acceptor levels related to complex defects involving Te atoms.…”

Structural characterization of AlxGa1−xSb grown by LPE

“…Ternary and quaternary GaSb alloys are very important materials because of their applications for optoelectronic devices such as photodiodes [1], solar cells [2] and photodetectors operating in the near or middle infrared region [3,4]. A lot of work has been performed to develop photodetectors that operate at 1.55 mm for application in optical communication systems.…”