Luminescence characteristics of InAlPInGaP heterostructures having native-oxide windows

Islam, Md. Ashraful; Dupuis, R. D.; Holmes, A. L.; Curtis, A. P.; Gardner, Nathan F.; Stillman, G. E.; Baker, J. E.; Hull, R.

doi:10.1016/s0022-0248(96)00587-8

Cited by 3 publications

(4 citation statements)

References 13 publications

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“…M.R. Islam et al [10] showed that the combination of InGaP/AlInP increased the life time of the carriers, reduced recombination and increased the short circuit current. Table 1 shows that the electron and hole mobility of Al 0.52 In 0.48 P is suitable for combination with GaAs and In 0.49 Ga 0.51 P semiconductor.…”

Section: Selection Of Materials For Heterojunctionmentioning

confidence: 99%

Introducing a novel high-efficiency arc less heterounction DJ solar cell

Abasian

Sabbaghi‐Nadooshan

2018

FACTA U EE

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The present study was undertaken to examine the structure and performance of hetero junctions on the fill factor, short circuit current and open circuit voltage of aInGaP/GaAsdual-junction solar cell. This goal of this work was to reduce recombination in the bottom cell so that the electrons and holes produced in the top cell with the lowest recombination participate in the output current. Semiconductors with a high bandwidth from the ѵш group were studied in order to obtain a high open circuit voltage. By observing mobility and lattice constant semiconductors (Al 0.52 In 0.48 P, GaAs and In 0. 49 Ga 0. 51 P), it was concluded that the semiconductor Al 0.52 In 0.48 P has high electron mobility and hole mobility and that the lattice constant matched to the GaAs semiconductor can be effective in reducing recombination. The cathode current and absorbed photons show that the composition InGaP/AlInP increased the number of charge carriers in the top cell. The structure of InGaP-AlInP/GaAs-AlInP was obtained by inserting an InGaP-AlInP heterojunction at the top and GaAs-AlInP heterojunction at the bottom of aInGaP/GaAs dual-junction cell. For this structure, short circuit current (J SC) = 22.96 mA/cm 2 , open circuit voltage (Voc) = 2.72 V, fill factor (FF) = 93.26% and efficiency(η)= 58.28% were obtained under AM1.5 (1 sun) of radiation.

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Section: Selection Of Materials For Heterojunctionmentioning

confidence: 99%

Introducing a novel high-efficiency arc less heterounction DJ solar cell

Abasian

Sabbaghi‐Nadooshan

2018

FACTA U EE

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“…The density of these traps and their impact on device performance has yet to be characterized. We recall here that time-resolved PL studies have shown remarkable differences in the luminescence properties of GaAs layers capped by In 0485 Al 0 515 P and Al 09 Ga 0 ,As native oxides, with the former showing a marked increase in the luminescence efficiency and decay time, and the latter a dramatic decrease in these quantities [7,15,16,19]. This data originally inspired our further study of the As-free oxides, and still suggests that the trapping behavior of residual P defects is less detrimental than that of residual As defects.…”

Section: Oxidation Barrier Layers and Interface Trapsmentioning

confidence: 99%

“…x P, an alloy which is lattice matched to GaAs at composition x~0.5. While InAlP native oxides [7,[14][15][16][17][18][19] have received relatively little attention compared to those of AlGaAs, we have found them to be far superior in their insulating characteristics [18,20,21]. Specifically, leakage current densities are 3-4 orders of magnitude lower, and their dielectric strength is much higher, as discussed in section II below.…”

Section: Introductionmentioning

confidence: 99%

III-V Compound Semiconductor Native Oxide Mosfets With Focus on Interface Studies

Hall¹,

Snider²,

Bunker³

2001

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“…The Al 0.52 In 0.48 P material has been studied by using metalorganic chemical vapor deposition (MOCVD) [8][9][10] and molecular beam epitaxy (MBE) [11][12][13][14] techniques. Comparing to MOCVD technique, the growth of Al 0.52 In 0.48 P by MBE yields a higher doping efficiency and less diffusion effect for its low growth temperature.…”

Section: Introductionmentioning

confidence: 99%