Luminescence behavior and compensation effect of N-doped ZnO films deposited by rf magnetron sputtering under various gas-flow ratios of O2/N2

Cho, Wei Min; Lin, Yow Jon; Liu, Chia‐Jyi; Chen, Liang Ru; Shih, Yu-Tai; Chen, Perry

doi:10.1016/j.jlumin.2013.09.029

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Cited by 10 publications

(2 citation statements)

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“…The amount of V O firstly increases with Li content, however, decreases after the Li content increasing to x = 0.1. This is due to the self-compensation effect of the two doping forms of Li in ZnO [37], which have been shown in Eqs. (1) and (2).…”

Section: Materials Characterizationmentioning

confidence: 84%

Enhanced gas sensing performance of Li-doped ZnO nanoparticle film by the synergistic effect of oxygen interstitials and oxygen vacancies

Zhao

Xie

Yang

et al. 2015

Applied Surface Science

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Section: Materials Characterizationmentioning

confidence: 84%

Enhanced gas sensing performance of Li-doped ZnO nanoparticle film by the synergistic effect of oxygen interstitials and oxygen vacancies

Zhao

Xie

Yang

et al. 2015

Applied Surface Science

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“…obtained a p-type ZnO layer in 1997 by nitrogen doping [15]. After this development, N, P, As and Li doping and co-doping of N with group-III elements have also resulted in p-type ZnO and MgZnO films [16][17][18][19][20]. However, it is ambiguous that p-type doping mechanisms and the stability as well as reproducibility of the p-type conduction in MgZnO films are the main issues at present in this research field.…”

Section: Introductionmentioning

confidence: 99%

Research of Structural and Optical Properties of MgZnO Films Annealed at Different Oxygen Partial Pressures

Liu

Zhang

2015

AMR

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Structural and optical properties of MgZnO films were investigated by annealing in oxygen at different pressures. The crystalline quality of the annealed films improves with increasing annealing pressure. After annealing at 3.03×105Pa, the grain size became larger and oxygen content in the annealed films increased. This was attributed to the recrystallization of the films under high annealing pressure. However, a decreased oxygen content was found by annealing the films at 1.01×105or 2.05×10-3Pa. According to the defect levels and the relationship between photoluminescence spectra and annealing conditions, it was suggested that the emission peak located at 2.270 eV in photoluminescence spectra was related to interstitial oxygen (Oi) which will compensate the donor defects (Znior/and VO) and lead to the MgZnO film transforming into ap-type conduction under the annealing pressure of 3.03×105Pa.

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Structural and optical properties of oxygen to argon flow ratio on the Zn0.98Cr0.02O thin films deposited by RF magnetron sputtering

Han

et al. 2015

J Mater Sci: Mater Electron

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Luminescence behavior and compensation effect of N-doped ZnO films deposited by rf magnetron sputtering under various gas-flow ratios of O2/N2

Cited by 10 publications

References 34 publications

Enhanced gas sensing performance of Li-doped ZnO nanoparticle film by the synergistic effect of oxygen interstitials and oxygen vacancies

Enhanced gas sensing performance of Li-doped ZnO nanoparticle film by the synergistic effect of oxygen interstitials and oxygen vacancies

Research of Structural and Optical Properties of MgZnO Films Annealed at Different Oxygen Partial Pressures

Structural and optical properties of oxygen to argon flow ratio on the Zn0.98Cr0.02O thin films deposited by RF magnetron sputtering

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