Luminescence and surface properties of MgxZn1−xO thin films grown by pulsed laser deposition

Abstract

Articles you may be interested inStructure and optical properties of a-plane ZnO/Zn0.9Mg0.1O multiple quantum wells grown on r-plane sapphire substrates by pulsed laser deposition Erratum: "Aging effect and origin of deep-level emission in ZnO thin film deposited by pulsed laser deposition" [Appl. Phys. Lett.86, 221910 (2005)] Appl. Phys. Lett. 87, 039902 (2005); 10.1063/1.1978974 Aging effect and origin of deep-level emission in ZnO thin film deposited by pulsed laser deposition Appl. Phys. Lett. 86, 221910 (2005); 10.1063/1.1939078Er-doped ZnO thin films grown by pulsed-laser deposition

Combinatorial growth of Mgx Zn1–xO epilayers by chemical vapor deposition

“…6 (line (a)) where for E g (ZnO) the lowest free exciton transition in ZnO at 3.375 eV (T = 4.2 K) is used. Low temperature luminescence data were provided by Heitsch et al [15] and Ohtomo et al [11]. Heitsch et al [15] obtained a linear behaviour (line (b) in Fig.…”

“…Low temperature luminescence data were provided by Heitsch et al [15] and Ohtomo et al [11]. Heitsch et al [15] obtained a linear behaviour (line (b) in Fig. 6) with a dependence (1.8 ± 0.1) x of the composition x.…”

Exciton confinement in homo- and heteroepitaxial ZnO/Zn1 − xMgxO quantum wells with x < 0.1

“…2,[28][29][30] For time resolved PL measurements, a standard streak-camera setup with a 100 fs Ti:sapphire laser as an excitation source was used. 31 …”

Manipulating Optical Properties of ZnO/Ga:ZnO Core–Shell Nanorods Via Spatially Tailoring Electronic Bandgap

“…[10] Being easily overlooked, doping is also capable of modulating the band alignment, which can be demonstrated by the band diagram of a homojunction. [2,11] Through modulating the carrier concentration by doping, electronic band structure tailoring can be achieved without coating lattice-mismatched material , in which the coated dielectric material (usually MgO) has a lower refractive index and inferior electronic property, [12] impairing the light extraction and electrode contact. Nevertheless, to the best of our knowledge, band engineering via doping has been rarely reported.…”