Luminescence and optical properties of siloxene

Stutzmann, M.; Brandt, Martin S.; Rosenbauer, M.; Fuchs, H. D.; Finkbeiner, S.; Weber, J.; Deák, Péter

doi:10.1016/0022-2313(93)90150-l

Cited by 73 publications

(54 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…During last decades several models were supposed for explanation of discussed effect. 90,111,[124][125][126][127][128] These models can be grouped into four classes: namely those based on quantum confinement alone; nanocrystal surface states; specific defects or molecules; and structurally disordered phases. However, the weight of evidence now clearly shows that only quantum confinement based models are consistent with the experimental data as a whole.…”

Section: Optical Properties-luminescencementioning

confidence: 99%

Silicon Porosification: State of the Art

Korotcenkov

Cho

2010

Critical Reviews in Solid State and Materials Sciences

149

View full text Add to dashboard Cite

Section: Optical Properties-luminescencementioning

confidence: 99%

Silicon Porosification: State of the Art

Korotcenkov

Cho

2010

Critical Reviews in Solid State and Materials Sciences

149

View full text Add to dashboard Cite

“…Also a report of Brandt et al 7 identifies siloxene derivatives as the source of the visible room-temperature PL in porous silicon. Comprehensive comparisons of light emission from porous silicon and siloxene derivatives are found in articles of Fuchs et al 8 and Stutzmann et al 9 In view of such a controversy the main challenge for investigations of silicon nanocrystals is to elucidate the origin of the visible PL.…”

Section: Introductionmentioning

confidence: 99%

Experimental investigation of band structure modification in silicon nanocrystals

et al. 2001

View full text Add to dashboard Cite

Experimental studies of size-related effects in silicon nanocrystals are reported. We present investigations carried out on nanocrystals prepared from single-crystal Si:P wafer by ball milling. The average final grain dimension varied depending on the way of preparation in the range between 70 and 230 nm. The ball milling was followed by sedimentation and selection of the smallest grains. The initial grain size distribution was measured by scanning electron microscopy. Further reduction in size was achieved by oxidation at 1000°C which creates a silicon dioxide layer around a silicon core. The oxidation process was monitored by transmission electron microscopy and the growth speed of SiO 2 was estimated in order to model the grain size of nanocrystals. Crystallinity of silicon grains was confirmed by x-ray diffraction and by transmission electron microscopy using a bright/dark field method and selected area diffraction pattern. In the silicon nanocrystals the electron energy levels are shifted which was observed separately for conduction band, valence band and energy band gap. Electron paramagnetic resonance was applied to investigate variation of the conduction band minimum by monitoring its influence on the hyperfine interaction of phosphorus shallow donor. On the basis of these results an explicit expression for conduction band upshift as a function of average grain size has been derived. Information about the downshift of the valence band was obtained from measurements on a photoluminescence band related to a deep to shallow level transition. A perturbation of a few meV for grain sizes of the order about 100 nm has been observed. Internal consistency of these findings has been examined by investigation of the photoluminescence band due to an electron-hole recombination whose energy is directly related to the band gap of silicon.

show abstract

“…A number of possibilities present themselves: radiative recombination of confined excitons within silicon clusters ͑''quantum dots''͒, 23 defect luminescence, 24 interfacial effects at cluster surfaces, 25 and luminescence from novel siloxene molecules. 26 Each of these proposed mechanisms has its proponents and supporting experimental evidence, leading to a very confused picture. Photoluminescence studies carried out to date have failed to conclusively identify a unique luminescence mechanism and there are a number of contradictory reports in the literature.…”

Section: Introductionmentioning

confidence: 99%

The origin of photoluminescence from thin films of silicon-rich silica

Kenyon

Trwoga

Pitt

et al. 1996

Journal of Applied Physics

206

View full text Add to dashboard Cite

We have carried out a study of the photoluminescence properties of silicon-rich silica. A series of films grown using plasma enhanced chemical vapor deposition over a range of growth conditions were annealed under argon at selected temperatures. Photoluminescence spectra were measured for each film at room temperature and for selected films at cryogenic temperatures. The photoluminescence spectra exhibit two bands. Fourier transform infrared and electron spin resonance spectroscopies were used to investigate bonding and defect states within the films. The data obtained strongly suggest the presence of two luminescence mechanisms which exhibit different dependencies on film growth conditions and postprocessing. We make assignments of the two mechanisms as ͑1͒ defect luminescence associated with oxygen vacancies and ͑2͒ radiative recombination of electron-hole pairs confined within nanometer-size silicon clusters ͑''quantum confinement''͒.

show abstract

Luminescence and optical properties of siloxene

Cited by 73 publications

References 20 publications

Silicon Porosification: State of the Art

Silicon Porosification: State of the Art

Experimental investigation of band structure modification in silicon nanocrystals

The origin of photoluminescence from thin films of silicon-rich silica

Contact Info

Product

Resources

About