Luminescence and excitation mechanism of Pr, Eu, Tb and Tm ions implanted into AlN

Łożykowski, H. J.; Jadwisienczak, Wojciech M.; Bensaoula, A.; Monteiro, O.R.

doi:10.1016/j.mejo.2005.02.045

Cited by 41 publications

(32 citation statements)

References 8 publications

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“…The observation of these two absorption bands in Euimplanted AlN samples was also reported by other authors. 33 In the SL samples, the relative intensity of the X 1 absorption band is increasing with the Eu concentration and for the highest fluence the PLE spectrum is almost identical to that of the AlN:Eu layer which was implanted to the same fluence. The fact that both PL and PLE show identical features in AlN:Eu and the SL indicates that in the SL samples implanted to the two higher fluences the main optically active Eu center resides in the AlN host of the buffer, capping, and spacer layers.…”

Section: -4mentioning

confidence: 82%

Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation

Magalhães

Peres

Fellmann

et al. 2010

Journal of Applied Physics

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Self-assembled GaN quantum dots ͑QDs͒ stacked in superlattices ͑SL͒ with AlN spacer layers were implanted with Europium ions to fluences of 10 13 , 10 14 , and 10 15 cm −2 . The damage level introduced in the QDs by the implantation stays well below that of thick GaN epilayers. For the lowest fluence, the structural properties remain unchanged after implantation and annealing while for higher fluences the implantation damage causes an expansion of the SL in the ͓0001͔ direction which increases with implantation fluence and is only partly reversed after thermal annealing at 1000°C. Nevertheless, in all cases, the SL quality remains very good after implantation and annealing with Eu ions incorporated preferentially into near-substitutional cation sites. Eu 3+ optical activation is achieved after annealing in all samples. In the sample implanted with the lowest fluence, the Eu 3+ emission arises mainly from Eu incorporated inside the QDs while for the higher fluences only the emission from Eu inside the AlN-buffer, capping, and spacer layers is observed.

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Section: -4mentioning

confidence: 82%

Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation

Magalhães

Peres

Fellmann

et al. 2010

Journal of Applied Physics

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“…ions lines in AlN [4,11,13,18,19] and GaN hosts [8,10,20,21]. In contrast to the CL spectra, the PL spectra show broadband background overlapping with RE ion emissions.…”

Section: +mentioning

confidence: 94%

Thermal quenching of luminescence and isovalent trap model for rare‐earth‐ion‐doped AlN

Łożykowski¹,

Jadwisienczak

2007

Physica Status Solidi (b)

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Investigations of the luminescent properties of Pr-, Eu-, Tb-and Tm-implanted AlN thin films at temperature in the range 9 -830 K are reported. The temperature studies of photoluminescence and cathodoluminescence spectra revealed unexpectedly weak thermal quenching for all investigated rare earth (RE) ions. The maximum CL emission is observed from Eu (red) at 485 K, Tb (green) at 590 K and Tm (blue) at 530 K, respectively. For Tb-and Tm-doped AlN samples, temperature-dependent crossrelaxation processes were observed. Photoluminescence excitation spectra, obtained under UV excitation in the spectral range 200 -400 nm, exhibit several bands. It is proposed that the RE ions exist in semiconductors as isolated ions (singlet), nearest-neighbor (nn) ion pairs (dimer), and three ions (trimer). The Koster -Slater and simple spherical potential-well models for RE-structured isovalent (RESI) hole trap are proposed. The exciton binding energies of RESI traps are calculated and compared with experimental thermal-quenching energies. The energy-transfer processes between the AlN host and the 4f-shell systems are emphasized as the main mechanisms for thermal-quenching processes rather than nonradiative decay of 4f transitions.

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“…4-7. These spectra represent electronic transitions from the 4 G 5/2 manifold to the ground state, 6 H 5/2 ͑Fig. 4͒ and to excited manifolds 6 H 7/2 , 6 H 9/2 , and 6 H 11/2 ͑Figs.…”

Section: Lattice Location Studiesmentioning

confidence: 99%

“…Equation ͑1͒ is diagonalized together with a parameterized free-ion Hamiltonian that includes Coulombic, spin-orbit, and interconfigurational interaction terms for Pm 3+ and Sm 3+ respectively. Our choice for these parameters comes from earlier spectroscopic studies on these ions by Carnall et al 15 The set of eigenvectors was truncated for Sm 3+ to include only the 6 H J , 6 F J , 4 G J , 4 F J states, and for Pm 3+ , only the 5 I J , 5 F J , 5 S 2 , and the 3 K J states.…”

Section: Crystal-field Splitting Calculationsmentioning

confidence: 99%

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Crystal field analysis ofPm3+(4f4)andSm3

et al. 2006

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We report a detailed crystal field analysis of Pm 3+ and Sm 3+ as well as lattice location studies of 147 Pm and 147 Nd in 2H-aluminum nitride ͑w-AlN͒. The isotopes of mass 147 were produced by nuclear fission and implanted at an energy of 60 keV. The decay chain of interest in this work is 147 Nd→ 147 Pm→ 147 Sm ͑stable͒. Lattice location studies applying the emission channeling technique were carried out using the ␤ − particles and conversion electrons emitted in the radioactive decay of 147 Nd→ 147 Pm. The samples were investigated as implanted, and also they were investigated after annealing to temperatures of 873 K as well as 1373 K. The main fraction of about 60% of both 147 Pm as well as 147 Nd atoms was located on substitutional Al sites in the AlN lattice; the remainder of the ions were located randomly within the AlN lattice. Following radioactive decay of 147 Nd, the cathodoluminescence spectra of Pm 3+ and Sm 3+ were obtained between 500 nm and 1050 nm at sample temperatures between 12 K and 300 K. High-resolution emission spectra, representing intra-4f electron transitions, were analyzed to establish the crystal-field splitting of the energy levels of Sm 3+ ͑4f 5 ͒ and Pm 3+ ͑4f 4 ͒ in cationic sites having C 3v symmetry in the AlN lattice. Using crystal-field splitting models, we obtained a rms deviation of 6 cm −1 between 31 calculated-to-experimental energy ͑Stark͒ levels for Sm 3+ in AlN. The results are similar to those reported for Sm 3+ implanted into GaN. Using a set of crystal-field splitting parameters B nm , for Pm 3+ derived from the present Sm 3+ analysis, we calculated the splitting for the 5 F 1 , 5 I 4 , and 5 I 5 multiplet manifolds in Pm 3+ and obtained good agreement between the calculated and the experimental Stark levels. Temperature-dependent lifetime measurements are also reported for the emitting levels 4 F 5/2 ͑Sm 3+ ͒ and 5 F 1 ͑Pm 3+ ͒.

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Luminescence and excitation mechanism of Pr, Eu, Tb and Tm ions implanted into AlN

Cited by 41 publications

References 8 publications

Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation

Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation

Thermal quenching of luminescence and isovalent trap model for rare‐earth‐ion‐doped AlN

Crystal field analysis ofPm3+(4f4)andSm3

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