<title>Thermo-optic phase modulators in SIMOX material</title>

Silicon‐On‐Insulator (SOI) Photonics

“…It is the thermo-optic effect, in which the refractive index of silicon is varied by applying heat to the material. The thermo-optic coefficient in silicon is [25]:…”

“…There are of course issues about controlling the temperature rise to the locality of the waveguide, and of efficiency of the mechanism used to deliver the thermal energy. However, experimental results [25] suggest that a 500-µm device length can deliver a phase shift of π radians for an applied power of 10 mW, if the waveguide is thermally isolated from the substrate. This corresponds to a thermal change of approximately 7 • C, and hence a refractive index change of approximately 1.3 × 10 −3 over the length of the device.…”

Silicon Optical Modulators in Silicon-on-Insulator (SOI) Substrate Based on the p-i-n Waveguide Structure

“…Until recently the majority of work in the field of silicon optical phase modulators has been based on modulators with silicon surface layers on the order of several microns thick [2]. Optical modulation can be achieved either via the thermal-optical effect [3] or the plasma dispersion effect [4]. In terms of device operating speed, however, the plasma dispersion effect has a fast response whereas the thermal-optical effect is a rather slow process.…”

Dielectric waveguide vertically coupled to all-silicon photodiodes operating at telecommunication wavelengths

“…When the off-resonance optical power increases from 20 lW to 85 lW, the shift in resonance wavelength is 0.18 nm, which corresponds to a change in the cavity temperature of $2 K given the thermo-optic coefficient of silicon of 1.86 Â 10 À4 /K. 12 In addition to thermo-optic detuning, we also note the effect of two-photon absorption, as is apparent in Fig. 3(b), where we plot the peak photocurrent against absorbed optical power.…”