&lt;title&gt;Thermal ionization energy of Mg acceptors in GaN: effects of doping level and compensation&lt;/title&gt;

Pődör, B.

doi:10.1117/12.435848

Cited by 6 publications

(2 citation statements)

References 10 publications

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“…In addition to suitable mobility and recombination models, the gate-dependent strain polarization model, especially suited to GaN devices, was activated. Since Mg has a relatively high ionization energy of 0.16 eV [ 41 , 42 ], Mg acceptors are not completely ionized at room temperature. Thus, to correctly model the p-doping levels and reproduce the breakdown voltage, the incomplete ionization model in Sentaurus was used, which is physically more accurate to model Mg doping.…”

Section: Resultsmentioning

confidence: 99%

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs

et al. 2021

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This work investigates p+n−n GaN-on-Si vertical structures, through dedicated measurements and TCAD simulations, with the ultimate goal of identifying possible strategies for leakage and breakdown optimization. First, the dominant leakage processes were identified through temperature-dependent current–voltage characterization. Second, the breakdown voltage of the diodes was modelled through TCAD simulations based on the incomplete ionization of Mg in the p+ GaN layer. Finally, the developed simulation model was utilized to estimate the impact of varying the p-doping concentration on the design of breakdown voltage; while high p-doped structures are limited by the critical electric field at the interface, low p-doping designs need to contend with possible depletion of the entire p-GaN region and the consequent punch-through. A trade-off on the value of p-doping therefore exists to optimize the breakdown.

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Section: Resultsmentioning

confidence: 99%

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs

et al. 2021

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“…Magnesium doping in GaN has been reported to form acceptor states located 0.16 eV above the valence band [ 56 , 57 ]. This relatively deep energy level results in incomplete thermal ionization of Mg acceptors at room temperature.…”

Section: Off-state-leakage and Doping Constraints Of Quasi-vertical Gan-on-si Diodes From Imec Leuven Belgiummentioning

confidence: 99%

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

et al. 2021

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The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field effect transistor (MOSFET) is a promising architecture for the development of efficient GaN-based power transistors on foreign substrates for power conversion applications. This work presents an overview of recent case studies, to discuss the most relevant challenges related to the development of reliable vertical GaN-on-Si trench MOSFETs. The focus lies on strategies to identify and tackle the most relevant reliability issues. First, we describe leakage and doping considerations, which must be considered to design vertical GaN-on-Si stacks with high breakdown voltage. Next, we describe gate design techniques to improve breakdown performance, through variation of dielectric composition coupled with optimization of the trench structure. Finally, we describe how to identify and compare trapping effects with the help of pulsed techniques, combined with light-assisted de-trapping analyses, in order to assess the dynamic performance of the devices.

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Microstructure and properties of epitaxial antimony-doped p-type ZnO films fabricated by pulsed laser deposition

Guo

Allenic

Chen

et al. 2007

Applied Physics Letters

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Antimony-doped p-type ZnO films epitaxially grown on (0001) sapphire substrates were fabricated by pulsed laser deposition at 400–600°C in 5.0×10−2Torr oxygen without postdeposition annealing. The films grown at 600°C have among the highest reported hole concentration of 1.9×1017cm−3 for antimony doping, Hall mobility of 7.7cm2∕Vs, and resistivity of 4.2Ωcm. Transmission electron microscopy reveals that the p-type conductivity closely correlates to the high density of defects which facilitate the formation of acceptor complexes and the compensation of native shallow donors. The thermal activation energy of the acceptor was found to be 115±5meV and the corresponding optical ionization energy is ∼158±7meV.

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<title>Thermal ionization energy of Mg acceptors in GaN: effects of doping level and compensation</title>

Cited by 6 publications

References 10 publications

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

Microstructure and properties of epitaxial antimony-doped p-type ZnO films fabricated by pulsed laser deposition

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