&lt;title&gt;Solar cells with porous silicon as antireflection layer&lt;/title&gt;

Adamian, Zaven N.; Hakhoyan, Armen P.; Aroutiounian, V. M.; Barseghian, Robert S.; Touryan, K. J.

doi:10.1117/12.448244

Cited by 3 publications

(8 citation statements)

References 2 publications

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“…Then samples immediately were rinsed in ethanol or methanol and dried under pure nitrogen flow. Semitransparent aluminum layers (∼ 0.1 µm) were sputtered on the front-face area of the samples having prepared PS layer for measurements of the capacitance, as described in [2]. Deposition was performed through a mask at a sliding angle.…”

Section: Preparation Of the Samplesmentioning

confidence: 99%

“…However, as shown in [2,4,8], for determination of porosity it is necessary to know the layer thickness, or, conversely, the layer thickness may be established, if the value of porosity is known. So, in [2,4] the layer thickness was determined from interference maxima in reflection spectra of PS layers. This produces additional inconvenience and, moreover, the corresponding interference pattern is not always recorded in the curves of reflection spectra because of, in particular, a small thickness of a PS layer.…”

Section: Introductionmentioning

confidence: 99%

“…However, a developed surface of PS, a large and controllable width of the forbidden band and a small effective index of refraction also make it possible to employ this material in other fields, such as chemical sensors and antireflection coatings for silicon solar cells (e.g., in [1][2][3][4][5][6][7]). Microstructure and physical characteristics of PS, such as thickness, bulk porosity, and specific area of the surface, pore size distribution, dielectric permittivity, and index of refraction depend directly on the production conditions, e.g., on the electrolyte composition, anodizing current density, duration of etching, lighting [1].…”

Section: Introductionmentioning

confidence: 99%

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Capacitance method for determination of basic parameters of porous silicon

Adamyan¹,

Adamian²,

Aroutiounian³

2007

Phys. Status Solidi (c)

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PACS 61.43. Gt, 77.22.Ch Microstructure and physical characteristics of porous silicon (PS), such as thickness, bulk porosity, dielectric permittivity, and refractive index depend directly on the production conditions, e.g., on the electrolyte composition, anodizing current density, duration of etching etc. Many various possibilities of applications of PS generate high interest towards elaboration of new or modified operative nondestructive methods for testing the microstructure characteristics of PS layer for the adjustment of its processing regimes. According to the mechanism of formation of porous silicon and experimental data on the morphology of PS layers, a porous layer represented as a structure with cylindrical pores of equal lengths piercing the silicon frame. This approximation allows considering the structure using the parallel plate model with in parallel connected capacitances of the silicon frame and the air or liquid dielectric filled pores. A method for obtaining information on the volume porosity, thickness, and dielectric permittivity of a PS layer by means of two measurements of the structure capacitance -in dry air and when the pores are filled by a condensed medium having a dielectric permittivity strongly differing from that of air (e.g., methanol) is described. Sufficiently good agreement has been revealed between the data calculated from the capacitance measurements and obtained by other methods.

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Section: Preparation Of the Samplesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Capacitance method for determination of basic parameters of porous silicon

Adamyan¹,

Adamian²,

Aroutiounian³

2007

Phys. Status Solidi (c)

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“…There are a variety of other techniques to make thin coatings with tunable refractive index such as chemical etching, vacuum deposition, and sol–gel method. One approach is to roughen the substrate by chemical etching to produce subvisible‐wavelength scale pores . The main drawbacks are time consuming and the use of hazardous etchants such as HF and H 2 SiF 4 .SiF 4 .…”

Section: Introductionmentioning

confidence: 99%

Antireflective coatings using organically modified silica and polyimide via solution casting method

2013

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Antireflective (AR) coatings were prepared using a polyimide and two types of organically modified silica colloids via a solution casting method. The optically transparent polyimide was prepared from 2,2'-Bis [4-(3,4dicarboxyphenoxy)phenyl]propane dianhydride (BPADA) and 4,4 0 -oxydianiline (ODA). The silica colloids were driven to the coating-air interface by either the fluorinated alkyl group or PDMS (Polydimethylsiloxane) segment tethered onto the silica colloids. The amount of fluorinated alkyl groups and the molecular weight of the siloxane grafted on the silica colloid were varied. The PDMS-silica and fluorosilica colloids were characterized by TEM (Transmission Electron Microscopy), DLS (Dynamic Light Scattering), FTIR (Fourier Transform Infrared Spectroscopy), solid-state 13 C NMR (Nuclear Magnetic Resonance) and solid-state 29 Si NMR. The AR coatings were characterized by UV-vis (Ultraviolet-Visible Spectroscopy) transmittance spectra, AFM (Atomic Force Microscope), and SEM (Scanning Electron Microscope). The effects of modified silica loading and type of solvent on AR properties were studied. An enhancement in AR activity was observed for 1 wt% PDMS-modified (low molecular weight) silica coatings and 3 wt.% fluorosilica-10 in dimethylacetamide (DMAc). In comparison with cyclopentanone (CPT), DMAc favors migration of silica particles toward coating-air interface giving higher transmittance. The migration of particles to the surface and consequently increased surface roughness was observed by SEM.

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“…With the use of PS it is possible to fabricate, in a single technological cycle, silicon light-emitting diodes and large integrated circuits with optoelectronic properties. However, a developed surface of PS, a large and controllable width of the forbidden band and a small effective index of refraction make it possible to employ this material in other fields, such as chemical sensors and antireflection coatings for silicon solar cells (see, e.g., [1][2][3][4][5][6][7][8]).…”

Section: Introductionmentioning

confidence: 99%

Determination of basic parameters of porous silicon

Adamyan¹,

Adamian²,

Aroutiounian³

2006

J. Phys. D: Appl. Phys.

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A new simple nondestructive capacitance method is proposed for determination of the basic parameters of porous silicon such as layer thickness, porosity and dielectric permittivity. The method is based on two measurements of the capacitance of a metal/porous silicon/single crystalline silicon/metal (M/PS/c-Si/M) structure, one measurement being performed with empty pores, and the other measurement with pores filled by an organic compound with a high value of dielectric permittivity. A comparison of results obtained by the ball lap and gravimetric techniques before and after anodization with the capacitance data measurements carried out with the same samples prior to their destruction shows sufficiently good agreement.

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<title>Solar cells with porous silicon as antireflection layer</title>

Cited by 3 publications

References 2 publications

Capacitance method for determination of basic parameters of porous silicon

Capacitance method for determination of basic parameters of porous silicon

Antireflective coatings using organically modified silica and polyimide via solution casting method

Determination of basic parameters of porous silicon

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