<title>Self-aligned double and quadruple patterning layout principle</title>

Abstract

Self-Aligned Double Patterning (SADP) has become one of the most promising processes for 20nm node technology and beyond. Despite its robustness against overlay, it is a challenging process for designers since predicting the wafer image instantly is almost impossible. Self-Aligned Quadruple Patterning (SAQP) is also critical technology for sub-10nm process but more complex than SADP, so it is too difficult to design a layout intuitively. Needless to say designing layout by applying N times sidewalls intuitively is impossible for almost everyone. In this paper, we clarify a new intuitive principle for SADP layout. The principle uses "Base patterns" painted in different two colors interchangeably. The proposed method enables us to design SADP layout simply by connecting and cutting fundamental pattern arbitrarily with a few restrictions. Another benefit is that either of two colors in the pattern can be used as mandrel. We can apply the principle to not only SAQP but also N times sidewall processes. Considering these advantages, layout formed by sidewall process becomes designer-friendly.

Fabrication of Sub-10 nm Metal Wire Circuits using Directed Self-Assembly of Block Copolymers

“…4. They show that HP 10 nm open and short PL-TEG circuit patterns were successfully fabricated using the combined process without the use of any multi-patterning, such as self-aligned quadruple patterning [26][27][28]. Figure 6 shows cross-sectional STEM profiles of metal wire circuits with 9 nm in width after metal deposition and chemical mechanical polishing (CMP).…”

Cut-hole layout decomposition and synthesis to reduce the effect of edge-placement errors

“…Unlike the conventional single-material self-aligned multiple patterning (SAMP) processes [15][16][17][18], a line array fabricated by an altSAMP process is made of two different materials (e.g., A and B) which allow a highly selective etching process to remove one material (ideally) without attacking the other. For example, a line array arranged in an alternating order of A-B-A-B… can be fabricated by an alternating-material self-aligned quadruple/octuple patterning (altSAQP/altSAOP) process, while a line array arranged in a quasialternating order of A-B-B-A-B-B… can be fabricated by an alternating-material self-aligned triple/sextuple (altSATP/altSASP) patterning process.…”

Self-Aligned Double and Quadruple Patterning Aware Grid Routing Methods

“…12, primary patterns are formed on mandrel positions and secondary patterns between sidewalls. Additionally, tertiary pattern is generated on the first sidewalls, so three-color mapping will be introduced for SID-type SAQP layout [10]. Patterns painted with the third color must be between patterns painted with the first and the second colors.…”

“…Moreover, pattern forming procedure is not intuitive due to the distinctive process. Layout is decomposed into primary and secondary patterns in SID-type SADP [9], and into primary, secondary and tertiary patterns in SID-type SAQP [10]. Primary patterns correspond to mandrel patterns formed by single exposure.…”