&lt;title&gt;Overview of dynamic scene projectors at the U.S. Army Aviation and Missile Command&lt;/title&gt;

Beasley, D. Brett; Saylor, Daniel A.; Buford, James A.

doi:10.1117/12.474714

Cited by 21 publications

(6 citation statements)

References 6 publications

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“…However for mid-wave IR (3−5 µm, MWIR) and long wave IR (8−12 µm, LWIR) atmosphere transparency windows these approaches do not work. Although narrow bandgap III−V compounds photonic emitters 7-8 (LEDs and lasers for MWIR) as well as thermal emitters [10][11] (resistively heated pixels for both MWIR and LWIR) bridge the gap, the picture however is not as bright as it should be. Due to low internal quantum efficiency (~1%) 7 , photonic emitters to operate properly have to be cooled.…”

Section: Introductionmentioning

confidence: 95%

Large area Si light emitting device for the mid-wave and long-wave infrared bands

2006

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The design, fabrication technology and parameters are presented for monolithic linear 16-element IR emitter bar and the 8 x 8 stack of bars. Both types of devices are based on the Si p + in + -diodes with the 0.86 x 0.86 mm 2 emitting surface integrated into a single chip and operated at well above room temperatures by the contact double injection of free charge carrier. To bypass Si electronic band structure limitation, we utilized free carrier absorption as a way to monitor material below-bandgap IR thermal emission. At a device temperature T=453 K, nearly 1.0 mW output power and 420 K apparent temperature of IR (3 to 12 µm spectral band) radiation could be achieved with ~0.8% external power efficiency and 0.1 ms rise-fall time. This represents the longer wavelengths, higher operating temperatures and output power from Si spontaneous emitters ever reported.

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Section: Introductionmentioning

confidence: 95%

Large area Si light emitting device for the mid-wave and long-wave infrared bands

2006

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“…Also there exists a great demand for large-format two dimensional (2D) IR-emitter arrays with very good uniformity and reliable operation for IR scene projection experiments. Conventional low-band-gap semiconductor materials like lead salts [1,2] are currently employed for such applications. However, rather poor quality of these narrow-band-gap materials limits their performance.…”

Section: Introductionmentioning

confidence: 99%

Long-wave (10μm) infrared light emitting diode device performance

Das

Bradshaw²,

Towner³

et al. 2008

Solid-State Electronics

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“…[4]) solves most of the above problems, not to mention increasing their performance due to radiation re ection from the anode bottom contact [5]. Data on the two-dimensional power distribution in these diodes are important in view of their application for dynamic scene simulation [6] as well as for their use for coupling to ÿbers and/or lenses. However, to the best of our knowledge no measurements of the 2D "emission map" or 1D emission distribution in ip-chip mid-IR A 3 B 5 diodes have been published so far.…”

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confidence: 99%