&lt;title&gt;Overview of advances in high-performance ROIC designs for use with IRFPAs&lt;/title&gt;

Chen, Leonard P.; Hewitt, Mary J.; Gulbransen, David J.; Pettijohn, Kevin L.; Chen, Bryan; Wyles, Richard

doi:10.1117/12.391724

Cited by 10 publications

(3 citation statements)

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“…Other direction is use photoresistors with variable currant photosensivity. As it is seen from the following Si(e/hu)uE/L (8) Where hD -energy of photons; r and G -quantum efficiency and internal amplification factor of the photoresistive detector; and rr -product of main current carriers mobility for their life time, E -strength of an electric field, Ldistance between contacts.…”

Section: Sensitivity Non-uniformity Of Photodetector Cellsmentioning

confidence: 99%

<title>Silicon photodetectors for longwave infrared focal plane arrays</title>

Chernokozhin

2005

SPIE Proceedings

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Review on peculiarities and tendencies of multielement JR photodetectors development are considered. The place and prospects ofextrinsic silicon longwave JR sensors and focal plane arrays (FPAs) are discussed. The achieved results and predicted characteristics show, that these devices are capable to provide the highest photoelectric characteristics and simultaneously cheapness, productivity, high reliability and durability oflongwave JR photodetection devices.

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Section: Sensitivity Non-uniformity Of Photodetector Cellsmentioning

confidence: 99%

<title>Silicon photodetectors for longwave infrared focal plane arrays</title>

Chernokozhin

2005

SPIE Proceedings

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“…Following this, the newly developed readouts will enter the class of special-purpose processors. It is such advanced readout processors that will largely enhance the performance and functionability of next-generation IR FPAs [3].…”

Section: Introductionmentioning

confidence: 99%

A new readout integrated circuit for long-wavelength IR FPA

Lee

2010

Infrared Physics & Technology

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“…CMOS technology scaling has enabled the integration of analog and digital processing in the focal plane down to the pixel level. New architectures that take advantage of such integration to enhance image sensor performance have been developed (e.g., [1,2]). An example is the Digital Pixel Sensor, where digitization is performed at the pixel-level providing ultra high speed and dynamic range imaging capabilities.…”

Section: Introductionmentioning

confidence: 99%

Folded multiple-capture: an architecture for high dynamic range disturbance-tolerant focal plane array

Kavusi

Gamal

2004

SPIE Proceedings

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Earlier studies have shown that multiple capture can achieve high SNR, but cannot satisfy the high dynamic range (HDR) and high speed requirements of the Vertically-Integrated-Sensor-Array (VISA) project. Synchronous selfreset, on the other hand, can achieve these requirements, but suffers from poor SNR. Extended counting can achieve high dynamic range at high frame rate and with good SNR, but at the expense of high power consumption. The paper proposes a new HDR focal plane array architecture, denoted by folded-multiple capture (FMC), which by combining features of the synchronous self-reset and multiple capture schemes, can satisfy the VISA requirements at a fraction of the power dissipation and with more robustness to device variations than extended counting. The architecture is also capable of detecting subframe disturbances, e.g., due to laser jamming, and correcting for it.

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<title>Overview of advances in high-performance ROIC designs for use with IRFPAs</title>

Cited by 10 publications

References 0 publications

<title>Silicon photodetectors for longwave infrared focal plane arrays</title>

<title>Silicon photodetectors for longwave infrared focal plane arrays</title>

A new readout integrated circuit for long-wavelength IR FPA

Folded multiple-capture: an architecture for high dynamic range disturbance-tolerant focal plane array

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