2010
DOI: 10.1016/j.infrared.2009.10.008
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A new readout integrated circuit for long-wavelength IR FPA

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Cited by 6 publications
(5 citation statements)
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“…Basic assumptions adopted in the proposed mathematical model of the system 'IR photodiode -direct injection readout circuit' were first formulated in (Kunakbaeva, Lee & Cherepov, 1993) and further developed in (Kunakbaeva & Lee, 1996;Lee et al, 2010;Gumenjuk-Sichevska, Karnaushenko, Lee & Polovinkin, 2011). In calculating the transfer characteristics of the system, for the input FET we employ the model of longchannel transistor in weak inversion (Overstraeten, 1975).…”
Section: A Mathematical Model For the System 'Ir Photodiode -Direct-imentioning
confidence: 99%
See 1 more Smart Citation
“…Basic assumptions adopted in the proposed mathematical model of the system 'IR photodiode -direct injection readout circuit' were first formulated in (Kunakbaeva, Lee & Cherepov, 1993) and further developed in (Kunakbaeva & Lee, 1996;Lee et al, 2010;Gumenjuk-Sichevska, Karnaushenko, Lee & Polovinkin, 2011). In calculating the transfer characteristics of the system, for the input FET we employ the model of longchannel transistor in weak inversion (Overstraeten, 1975).…”
Section: A Mathematical Model For the System 'Ir Photodiode -Direct-imentioning
confidence: 99%
“…The storage capacitance can be increased through implementing a new architecture of readout circuits (curves 6 and 7 in Fig. 18) (Lee, 2010). A cardinal solution here is implementation of ADC in each pixel of the readout circuit (Zhou, 1996;Martijn, 2000;Fowler, 2000).…”
Section: Temperature Resolution Of Thermography Systems Based On Multmentioning
confidence: 99%
“…The temperature resolution of thermography systems with typi− cal values of Q CC = 5 Me (curve 5) for l 2 = 8 μm is one order of magnitude, and for l 2 = 14 μm, two orders of mag− nitude worse than that of an ideal thermography system (curve 1). The temperature resolution can be substantially improved by increasing the charge capacity of silicon readout circuits (curves 6 and 7) [18].…”
Section: Fig 3 the Dependences D*(v G ) (Right Axis) And Qmentioning
confidence: 99%
“…Most of the approaches today employ CMOS silicon circuitry for which the power dissipation is much lower than that of bipolar. Research works are still going on to improve this electronics, mainly for noise considerations (Chen et al, 2006;Lee, 2010;Lv et al, 2010). However, that electronics only enables the readout of the measured signal and cannot be directly derived to implement smart functions or operate the bolometer with feedback.…”
Section: Introductionmentioning
confidence: 99%