1992
DOI: 10.1117/12.138062
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<title>Optical nonlinearities and optical limiting in GaP at 532 nm</title>

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Cited by 6 publications
(6 citation statements)
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“…TPA materials widely studied are semiconductors, such as GaAs, with a band-gap energy greater than the photon energy of the light source, giving the desirable feature of high transmittance for low incident light. At high intensities, processes associated with TPA, including free carrier generation and absorption and defocusing caused by an induced change in refractive index, limit the throughput of the limiter. , TPA limiters include bulk semiconductor materials as well as semiconductor nanoparticles …”
Section: Resultsmentioning
confidence: 99%
“…TPA materials widely studied are semiconductors, such as GaAs, with a band-gap energy greater than the photon energy of the light source, giving the desirable feature of high transmittance for low incident light. At high intensities, processes associated with TPA, including free carrier generation and absorption and defocusing caused by an induced change in refractive index, limit the throughput of the limiter. , TPA limiters include bulk semiconductor materials as well as semiconductor nanoparticles …”
Section: Resultsmentioning
confidence: 99%
“…where β n (integer n 1) is the (n + 1)-photon absorption coefficient. Thus the normalized transmittance of the Zscan for the nonlinear medium can be obtained by combining equations ( 1)- (3). Combining these equations, we can get the quantities of interest n 2 and β n by fitting the experimental data.…”
Section: Resultsmentioning
confidence: 99%
“…Gallium phosphide (GaP) is a typical III-V semiconductor which has been used as a luminance diode [1], an acoustooptical modulator [2] and an optical limiter [3]. More recently, for terahertz generation and detection via femtosecond laser at 1040 nm, GaP has been the most commonly used material because it allows long working length [4], and thus using GaP as the emitter can scale up the energy of terahertz radiation pulses with very high pump power [5][6][7].…”
Section: Introductionmentioning
confidence: 99%
“…By using a simple optical system that utilizes an intermediate focal plane, thin films of GaP were investigated for OL. 367 Upon irradiation at 532 nm, with 25 ps pulses, GaP exhibited an output limiting level of less than 1 pJ/cm 2 . Also, an InP/ silicon-on-insulator hybrid photonic nanocavity was tested as an all-optical power limiter.…”
Section: Nanocrystalsmentioning
confidence: 99%