&lt;title&gt;Novel GaAs/AlAs tunnel structures as microwave detectors&lt;/title&gt;

Syme, R. T.; Kelly, Michael J.; Robinson, Mike F.; Smith, Robin S.; Dale, I.

doi:10.1117/12.137622

Cited by 11 publications

(7 citation statements)

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“…We must also ensure that α = β = 0 above to within ± 0.05, i.e. that both interfaces of the AlAs tunnel barrier had complete layers of AlAs adjacent to complete layers of GaAs to eliminate the form of variability seen in earlier experiments [6,7]. There is another aspect to this variability, namely that if the barrier is a ternary alloy, the alloy atoms have to be randomly positioned in the group III or group V sublattice.…”

Section: By Integrating the Product N(e)t(e) F (E)v(e) Wherementioning

confidence: 99%

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Thickness control of molecular beam epitaxy grown layers at the 0.01–0.1 monolayer level

DasMahapatra¹,

Sexton²,

Missous³

et al. 2012

Semicond. Sci. Technol.

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Electron tunnelling through semiconductor tunnel barriers is exponentially sensitive to the thickness of the barrier layer, and in the most common system, the AlAs tunnel barrier in GaAs, a one monolayer variation in thickness results in a 300% variation in the tunnelling current for a fixed bias voltage. We use this degree of sensitivity to demonstrate that the level of control at 0.06 monolayer can be achieved in the growth by molecular beam epitaxy, and the geometrical variation of layer thickness across a wafer at the 0.01 monolayer level can be detected.

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Section: By Integrating the Product N(e)t(e) F (E)v(e) Wherementioning

confidence: 99%

“…We now describe the asymmetric space layer tunnel (ASPAT) diode [5,6] which is the vehicle for this study. We place a single AlAs tunnel barrier towards one end of the i-region of an n-i-n GaAs structure.…”

Section: By Integrating the Product N(e)t(e) F (E)v(e) Wherementioning

confidence: 99%

Thickness control of molecular beam epitaxy grown layers at the 0.01–0.1 monolayer level

DasMahapatra¹,

Sexton²,

Missous³

et al. 2012

Semicond. Sci. Technol.

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“…It is apparent from the results that the IV characteristics are radically different from those of the conventional ASPAT introduced by R. T. Syme and M. J. Kelly [1,2]. The comparison between this new structure and the conventional one is shown in Table III.…”

Section: Discussionmentioning

confidence: 83%

“…Previous study by R. T. Syme and M. J. Kelly [1] introduced an asymmetrical spacer layer for use as a microwave detector. This conventional ASPAT consists of a single AlAs barrier and two GaAs spacers with asymmetrical thickness ratio of 40:1.…”

Section: Introductionmentioning

confidence: 99%

Asymmetric Spacer Layer Tunnel In0.18Ga0.82As/AlAs (ASPAT) Diode using double quantum wells for dual functions: Detection and oscillation

Ariffin

Muttlak

Abdullah

et al. 2015

2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop (UCMMT)

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The work reported here proposes a new Asymmetric Spacer Layer Tunnel (ASPAT) Diode structure. The most interesting feature found from this study is the dual functions capability of the proposed device. In order to expand the device functionality, the new ASPAT has been designed with a thin potential barrier of AlAs sandwiched between double quantum wells of In .18 Ga .82 As. The work focuses on experimental and physical modelling of this novel In 0.18 Ga 0.82 As/AlAs double quantum well ASPAT diode on GaAs. To broaden and extend the operating frequency range, three different mesa size devices (100x100 μm 2 , 30x30 μm 2 and 6x6 μm 2 ) were fabricated and measured. The I-V characteristics of these devices show negative deferential resistance (NDR) region as well as zero bias turn-on feature which give this device capability to work as both a detector and oscillator depending upon bias.

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“…A short circuit at the rf was provided at the diode by an open circuit, quarter-wavelength stub. The results of testing at 9.4 GHz have been presented be fore (Syme et al 1992), and are summarized in table 1. Figure 3 shows examples of the transfer function at 9.4 GHz for aspat E20396 and some conventional diodes.…”

Section: (Ii) DC Assessmentmentioning

confidence: 99%

Tunnelling devices as microwave mixers and detectors

Syme

1996

Phil. Trans. R. Soc. Lond. A

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Semiconductor tunnel devices can be used as mixers or detectors of microwaves and two examples are given in this paper. First, single-barrier tunnel detector diodes are described and their performance is compared with conventional devices at fre quencies up to 35 GHz. Second, the predicted and measured performance of resonant tunnelling diodes as mixers at 94 GHz are discussed. Such mixer diodes can exhibit conversion gain but it is shown th a t their noise figures are, in general, worse than conventional devices. Some conclusions are drawn regarding the likely applications of both kinds of device.

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<title>Novel GaAs/AlAs tunnel structures as microwave detectors</title>

Cited by 11 publications

References 0 publications

Thickness control of molecular beam epitaxy grown layers at the 0.01–0.1 monolayer level

Thickness control of molecular beam epitaxy grown layers at the 0.01–0.1 monolayer level

Asymmetric Spacer Layer Tunnel In0.18Ga0.82As/AlAs (ASPAT) Diode using double quantum wells for dual functions: Detection and oscillation

Tunnelling devices as microwave mixers and detectors

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