&lt;title&gt;Modification of wetting properties of glazing by ion beam irradiation&lt;/title&gt;

Ross, G.G.; Paynter, R.W.; Jean, Etienne; Veilleux, G.; Boussaa, N.; Poirier, A.

doi:10.1117/12.321958

Cited by 4 publications

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“…Plasmas and ion implantation assisted processes are very efficient for the modification of wetting properties [1][2][3][4][5], which is required in many applications such as coatings adhesion [6], charge migration in semiconductors [7], antifog and anti-frost treatments [8][9][10]. However, the change of the wettability with the passage of time after treatment, called ageing, restricts their use.…”

Section: Introductionmentioning

confidence: 99%

“…In many applications such as anti-fogging glasses and antifrosting electrical insulator [5,9,10], the surface composition to be modified contains a large fraction of SiO x . However, the complexity of glass, glaze and ceramic composition is an obstacle to a good understanding of the mechanism leading to the modification of the wetting properties and its ageing.…”

Section: Introductionmentioning

confidence: 99%

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Effect of ageing on wettability of quartz surfaces modified by Ar implantation

Ross¹,

Chassé²,

Bolduc³

2003

J. Phys. D: Appl. Phys.

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Ion implantation is a powerful technique to modify the contact angles of surfaces. However, a change of the contact angle with the passage of time, called ageing, is observed on most surfaces. This paper aims to better understand the mechanism leading to the ageing of quartz surfaces implanted by argon ion. Coupons of quartz have been irradiated by 3 keV Ar ions to a fluence of 1.8×1016 Ar cm−2. Some implantations were performed under oxygen partial pressure (∼5×10−5 Torr). The samples have been characterized at different periods of time after implantation by means of contact angle hysteresis measurements, angle resolved x-ray photoelectron spectroscopy (ARXPS) and lateral force microscopy (LFM). A more hydrophilic surface was observed immediately after implantation. This effect was strongly enhanced by the use of an O2 partial pressure. With the passage of time, the contact angles increased both in ambient air as well as under an Ar atmosphere. Characterization by means of XPS has shown a decrease of the relative concentrations of the more polar molecules containing oxygen (C–O, C = O and (O–C = O)–O) which could partly explain the increase of the contact angles with time. On the other hand, a higher ratio of the signals SiO2(104 eV)/SiO2(103 eV) is observed for samples implanted with O2which could be responsible for their higher level of wettability. A model using the ARXPS measurements suggests that for the samples implanted without oxygen, the ageing could also be caused by the spreading of a natural carbonaceous surface layer dispersed into islands after the Ar implantation. This layer being more hydrophobic than the SiO2 surface, its spreading would increase the contact angles. Characterization by means of AFM–LFM shows that the surface is composed of two areas having different friction properties. Their distribution is in agreement with the covered surface fraction given by the model for the samples implanted without oxygen and aged in Ar.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of ageing on wettability of quartz surfaces modified by Ar implantation

Ross¹,

Chassé²,

Bolduc³

2003

J. Phys. D: Appl. Phys.

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Modification of wetting properties of SiOx surfaces by Ar implantation

Chassé

Ross

2002

Nuclear Instruments and Methods in Physics Research Section B:

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Effect of aging on wettability of silicon surfaces modified by Ar implantation

Chassé

Ross

2002

Journal of Applied Physics

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The contact angles of most surfaces modified by ion implantation change with the passage of time. The aim of this experiment is to better understand the mechanism leading to the aging of argon implanted silicon oxide surfaces. Coupons of silicon with its native oxide layer have been irradiated by means of 3 keV Ar ions with a fluence of 1.8×1016 Ar/cm2. Some of the implantations have been performed under oxygen partial pressure (∼5×10−5 Torr). The samples have been characterized at different periods of time after the implantation, by means of contact angle hysteresis measurements and angle resolved x-ray photoelectron spectroscopy (ARXPS). Irradiation with Ar ions has produced a more hydrophilic surface immediately after implantation. With the passage of time, the contact angles have increased both in ambient air and in argon atmosphere. Characterization by means of XPS has shown that there is with time a small increase of the O concentration as well as a small decrease of the quantity of Ar in the silicon oxide surfaces. The shape of the C 1s and Si 2p spectra and their details are also slightly modified with the passage of time. A model using the ARXPS measurements suggests that for the samples implanted without oxygen, the aging would be principally due to the spreading of a natural carbonaceous surface layer dispersed into islands after the Ar implantation. The layer being more hydrophobic than the silicon oxide, its spreading would increase the apparent contact angles. On the other hand, the increase of the carbon concentration in the carbonaceous layer would produce a more hydrophobic surface and would be responsible for the aging of the samples implanted in O2 partial pressure. Results obtained by means of a simple model and the Cassie’s equation suggest that for the samples implanted without O2 gas, the contact angles of the substrate and the carbonaceous layer are 5° and 110°, respectively. The apparent contact angle obtained with the Cassie’s equation is in good agreement with the experimental measurements.

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<title>Modification of wetting properties of glazing by ion beam irradiation</title>

Cited by 4 publications

References 1 publication

Effect of ageing on wettability of quartz surfaces modified by Ar implantation

Effect of ageing on wettability of quartz surfaces modified by Ar implantation

Modification of wetting properties of SiOx surfaces by Ar implantation

Effect of aging on wettability of silicon surfaces modified by Ar implantation

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