2002
DOI: 10.1016/s0168-583x(02)00913-8
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Modification of wetting properties of SiOx surfaces by Ar implantation

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Cited by 9 publications
(7 citation statements)
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“…When the cycle time increases, the water contact angle decreases from 70° on the untreated sample to 19º on the samples treated for 500 µs. Our results are consistent with preview studies, showing that ion bombardment is an effective technique for modification of the surface contact angle [31,32].…”
Section: Contact Angle Measurementssupporting
confidence: 92%
“…When the cycle time increases, the water contact angle decreases from 70° on the untreated sample to 19º on the samples treated for 500 µs. Our results are consistent with preview studies, showing that ion bombardment is an effective technique for modification of the surface contact angle [31,32].…”
Section: Contact Angle Measurementssupporting
confidence: 92%
“…Then they were implanted with mass-analysed 3 keV Ar to doses varying from 3.6×10 16 to 1.8×10 17 Ar + cm −2 . The Ar ions were implanted under an O 2 partial pressure (∼5 × 10 −5 Torr); this process is known to be very efficient for obtaining very wetting surfaces [3][4][5][6]. No variation in the measurement of the ion beam current was observed, meaning that only a negligible part of the ions were neutralized by the O 2 partial pressure.…”
Section: Materials Preparationmentioning
confidence: 99%
“…The affinity of a given liquid for a specific material can be modified by different techniques, which are capable of changing the properties of the material surface. Plasma [2] and ion implantation [3][4][5][6] assisted processes are very efficient for modification of wetting properties. However, the change in wettability with the passage of time after treatment, called ageing [7,8], restricts their use as a tool for anti-fogging treatment.…”
Section: Introductionmentioning
confidence: 99%
“…Literature contains numerous examples of contact wetting angle as an empirical diagnostic tool for evaluating the effects of semiconductor processing. [7][8][9][10][11][12][13][14][15] Typically, contact wetting angle measurement is qualitatively used to detect processing-induced surface changes by classifying treated surfaces as becoming more hydrophobic or hydrophilic. For example, the surface of ITO films reportedly change from hydrophobic to hydrophilic after ion beam etching.…”
Section: Introductionmentioning
confidence: 99%
“…15 Also, it has been shown that a clean Si surface is hydrophobic and becomes increasingly hydrophilic as oxide thickness increases. 8 Additionally, wetting angles have been used for diagnostic applications by relating specific wetting angles to device performance for thin film CuInS 2 absorbers. 9 We attempt to expand upon previous studies and provide a more theoretical and quantitative basis for the use of contact angles as a characterization tool by determining the dispersive and polar surface energy components from the wetting angles of water and formamide on thin films in a CdTe/CdS solar cell prior to and subsequent to post-deposition processing.…”
Section: Introductionmentioning
confidence: 99%