&lt;title&gt;Mathematical and CAD framework for proximity correction&lt;/title&gt;

Cobb, Nicolas B.; Zakhor, Avideh; Miloslavsky, E.

doi:10.1117/12.240907

Cited by 100 publications

(64 citation statements)

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“…Fortunately, over the past eight years or so, several groups have made significant advances in algorithmic approaches to enable rapid calculation of this quantity [24], [25], [89], [81], [88]. Instead of roughly scaling with the square of the area for such calculations, as was the case with the original algorithms [23], [90], the fast algorithms available today roughly scale with the area [25].…”

Section: A General Considerationsmentioning

confidence: 99%

Using advanced simulation to aid microlithography development

Cole

Barouch²,

Conrad³

et al. 2001

Proc. IEEE

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Section: A General Considerationsmentioning

confidence: 99%

Using advanced simulation to aid microlithography development

Cole

Barouch²,

Conrad³

et al. 2001

Proc. IEEE

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“…These techniques alter the layout data for the photomask to make certain portions of features larger or smaller, in accord with how much additional exposure (or lack of exposure) is desired at certain points on the wafer [7,8,9]. When these adjustments are appropriately calibrated, overall pattern fidelity is greatly improved, reducing linewidth variation.…”

Section: Ret 21 Three Approaches To Retmentioning

confidence: 99%

“…The additional small features, typically added to the photomask by some simple width and spacing rules, allow isolated or semi-isolated lines to diffract light like dense lines, and yet do not themselves print on the wafer. [16,17,8,19]. This can work well for bringing the lithographic performance of isolated and dense lines into agreement, but for the case of intermediate pitches, things can be more difficult.…”

Section: Opcmentioning

confidence: 99%

Impact of RET on physical layouts

Schellenberg¹,

Capodieci²

2001

Proceedings of the 2001 International Symposium on Physical Design

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In this paper, we briefly describe the lithography developments known as RET (Resolution Enhancement Technologies), which include off-axis illumination in litho tools, Optical and Process Correction (OPC), and phase shifting masks (PSM). All of these techniques are adopted to allow ever smaller features to be reliably manufactured, and are being generally adopted in all manufacturing below 0.25 microns. However, their adoption also places certain restrictions on layouts. We explore these restrictions, and then provide suggestions for layout practices that will facilitate the use of these technologies, especially the generation of a clean "target" layout for use as input layers for photomask preparation, and the use of verification tools that use process simulation.

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“…The variable threshold resist model family was introduced and better fitting parameters have been proposed to increase the accuracy of the model predictions. [1][2][3][4][5] However, as lithography systems print higher densities and finer dimensions, process windows are reduced, while the CD sensitivities to process variations are increased. Thus, it is not enough to use only the nominal lithography process conditions.…”

Section: Introductionmentioning

confidence: 99%

Fast lithography simulation under focus variations for OPC and layout optimizations

Pan

Mack

2006

SPIE Proceedings

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In 90nm technology and beyond, process variations should be considered such that the design will be robust with respect to process variations. Focus error and exposure dose variations are the two most important lithography process variations. In a simple approximation, the critical dimension (CD) is about linearly related to the exposure dose variation, while it is quadratically related to the focus variation. Other kinds of variations can be reduced to these variations effectively as long as they are small. As a metric to measure the effects of exposure dose variations, normalized image log-slope (NILS) is pretty fast to compute once we have the aerial images. OPC software has used it as an optimization objective. But focus variation has not been commonly considered in current OPC software. One way is to compute several aerial images at different defocus conditions, but this approach is very time consuming.In this paper, we derive an analytical formula to compute the aerial image under any defocus condition. This method works for any illumination scheme and is applicable to both binary and phase shift masks (PSM). A model calibration method is also provided. It is demonstrated that there is only about 2-3x runtime increase using our fast focus-variational lithography simulation compared to the current single-focus lithography simulation. To confirm the accuracy, our model is compared with PROLITH TM . This ultra-fast simulator can enable better and faster process-variation aware OPC to make layouts more robust under process variations, and directly guide litho-aware layout optimizations.

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<title>Mathematical and CAD framework for proximity correction</title>

Cited by 100 publications

References 0 publications

Using advanced simulation to aid microlithography development

Using advanced simulation to aid microlithography development

Impact of RET on physical layouts

Fast lithography simulation under focus variations for OPC and layout optimizations

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