&lt;title&gt;Laser-induced functional damage to silicon CCD sensor arrays&lt;/title&gt;

Becker, Michael F.; Zhang, Chen-Zhi; Blarre, Ludovic; Walser, R. M.

doi:10.1117/12.60092

Cited by 13 publications

(12 citation statements)

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“…The objective plane irradiances to cause damage during a 0.5 ms exposure were 0.4 Wcm −2 and 0.7 Wcm −2 for silicon cameras (in focus) and SWIR sensors, respectively. Becker et al published LIDT data on CCDs using 1064 nm nanosecond pulses and found functional output changes from 0.55 Jcm −2 [ 6 ]. The article provides an interesting investigation into the damage morphology.…”

Section: Introductionmentioning

confidence: 99%

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Visible-Band Nanosecond Pulsed Laser Damage Thresholds of Silicon 2D Imaging Arrays

Westgate

James

2022

Sensors

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Laser-induced camera damage thresholds were measured for several sensors of three different sensor architectures using a Q-switched Nd:YAG laser in order to determine their pulsed laser-induced damage thresholds. Charge coupled device (CCD), front-side illuminated complimentary metal-oxide semiconductor (FSI CMOS), and back-side illuminated (BSI) CMOS sensors were assessed under laboratory and outdoor environments by increasing the focused laser intensity onto the sensors and recording the sensor output. The damage sites were classified qualitatively into damage types, and pixel counting methods were applied to quantitatively plot damage scale against laser intensity. Probit-fits were applied to find the intensity values where a 95% probability of damage would occur (FD95) and showed that FD95 was approximately the same under laboratory conditions for CCD, FSI CMOS, and BSI CMOS sensors (mean 532 nm FD95 of 0.077 ± 0.01 Jcm−2). BSI CMOS sensors were the most robust to large-scale damage effects—BSI sensor kill was found at approximately 103 Jcm−2, compared to 10 Jcm−2 for FSI CMOS, and between ~1.6 and 2.7 Jcm−2 for CCDs.

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Section: Introductionmentioning

confidence: 99%

“…Becker et al published LIDT data on CCDs using 1064 nm nanosecond pulses and found functional output changes from 0.55 Jcm −2 [ 6 ]. The article provides an interesting investigation into the damage morphology.…”

Section: Introductionmentioning

confidence: 99%

Visible-Band Nanosecond Pulsed Laser Damage Thresholds of Silicon 2D Imaging Arrays

Westgate

James

2022

Sensors

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“…Of course, there are some publications regarding laser damage thresholds of camera sensors and DMDs. For example, Becker et al 7,8 studied laser-induced damage of CCD sensors by nanosecond laser pulses at 1064 nm. First functional changes were observed at a fluence value of 0.55 J∕cm 2 .…”

Section: Introductionmentioning

confidence: 99%

Laser-induced damage threshold of camera sensors and micro-opto-electro-mechanical systems

et al. 2016

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The continuous development of laser systems toward more compact and efficient devices constitutes an increasing threat to electro-optical imaging sensors, such as complementary metal-oxide-semiconductors (CMOS) and charge-coupled devices. These types of electronic sensors are used in day-to-day life but also in military or civil security applications. In camera systems dedicated to specific tasks, micro-optoelectromechanical systems, such as a digital micromirror device (DMD), are part of the optical setup. In such systems, the DMD can be located at an intermediate focal plane of the optics and it is also susceptible to laser damage. The goal of our work is to enhance the knowledge of damaging effects on such devices exposed to laser light. The experimental setup for the investigation of laser-induced damage is described in detail. As laser sources, both pulsed lasers and continuous-wave (CW)-lasers are used. The laser-induced damage threshold is determined by the single-shot method by increasing the pulse energy from pulse to pulse or in the case of CW-lasers, by increasing the laser power. Furthermore, we investigate the morphology of laser-induced damage patterns and the dependence of the number of destructive device elements on the laser pulse energy or laser power. In addition to the destruction of single pixels, we observe aftereffects, such as persistent dead columns or rows of pixels in the sensor image.

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“…For example, Becker et al 7,8 studied laser-induced damage of CCD sensors by nanosecond laser pulses at 1064 nm. First functional changes were observed at a fluence value of 0.55 J∕cm 2 .…”

Section: Introductionmentioning

confidence: 99%

Laser-induced damage threshold of camera sensors and micro-optoelectromechanical systems

et al. 2017

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, "Laser-induced damage threshold of camera sensors and micro-optoelectromechanical systems," Opt. Eng. 56(3), 034108 (2017), doi: 10.1117/1.OE.56.3.034108. Abstract. The continuous development of laser systems toward more compact and efficient devices constitutes an increasing threat to electro-optical imaging sensors, such as complementary metal-oxide-semiconductors (CMOS) and charge-coupled devices. These types of electronic sensors are used in day-to-day life but also in military or civil security applications. In camera systems dedicated to specific tasks, micro-optoelectromechanical systems, such as a digital micromirror device (DMD), are part of the optical setup. In such systems, the DMD can be located at an intermediate focal plane of the optics and it is also susceptible to laser damage. The goal of our work is to enhance the knowledge of damaging effects on such devices exposed to laser light. The experimental setup for the investigation of laser-induced damage is described in detail. As laser sources, both pulsed lasers and continuous-wave (CW)-lasers are used. The laser-induced damage threshold is determined by the single-shot method by increasing the pulse energy from pulse to pulse or in the case of CW-lasers, by increasing the laser power. Furthermore, we investigate the morphology of laser-induced damage patterns and the dependence of the number of destructive device elements on the laser pulse energy or laser power. In addition to the destruction of single pixels, we observe aftereffects, such as persistent dead columns or rows of pixels in the sensor image.

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<title>Laser-induced functional damage to silicon CCD sensor arrays</title>

Cited by 13 publications

References 0 publications

Visible-Band Nanosecond Pulsed Laser Damage Thresholds of Silicon 2D Imaging Arrays

Visible-Band Nanosecond Pulsed Laser Damage Thresholds of Silicon 2D Imaging Arrays

Laser-induced damage threshold of camera sensors and micro-opto-electro-mechanical systems

Laser-induced damage threshold of camera sensors and micro-optoelectromechanical systems

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