&lt;title&gt;Improving the performance and usability of a wet-developable DUV resist for sub-500nm lithography&lt;/title&gt;

Samarakone, Nandasiri; Driessche, Veerle Van; Jaenen, Patrick; hove, Luc Van den; Ritchie, Douglas R.; Luehrmann, Paul Frank

doi:10.1117/12.44771

Cited by 6 publications

(2 citation statements)

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“…Both exposure and defocus latitudes for given feature sizes are graphically represented in terms ofpercentages of nominal feature size. These types of windows have been used previously to determine lithographic feasibility [9]. Figures 10 and 1 1 illustrate the E/D windows for O.45jtm and 0.35 j.im lines/spaces, respectively.…”

Section: Lithographic Performancementioning

confidence: 99%

Evaluation of high-numerical-aperture wide-field steppers for 0.35-micron design rules

Katz¹,

Greeneich²,

Rogoff³

et al. 1992

SPIE Proceedings

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Many lithographic approaches to achieving 0.35 micron IC design rules have been proposed. Several years ago, the primary candidate was x-ray lithography. Today it is generally acknowledged that an optical approach will be used for such design rules. Both deep UV and i-line stepper technologies have progressed with capability to achieve O.35im design rules. High NA, wide-field lenses now exist for both deep UV and i-line [1]. With the renewed interest in phase shift technology, i-line capability at O.35im design rules is comparable to deep UV technology.The development of a stepper architecture that allows both wide-field i-line and deep UV lenses to be accommodated in the same body and using thru-the-lens, direct-reticle-referenced alignment. method [2] is reported. Common improvements in the areas of stage, die-by-die leveling and environmental control allow exceptional overlay performance to be achieved for both i-line and deep UV. The use of common architecture and the same alignment method facilitates the optimum mix and match combination of i-line and deep UV at O.35jim design rules Experimental investigation of stepper performance is reported in comparison to criteria established for design rules at O.35im. Overlay is evaluated on substrates typical of CMOS IC manufacturing. Lithographic performance is investigated using conventional techniques as well as more advanced techniques including phase shift reticles.Results indicate that overlay performance on tested substrates meets the requirements for O.35jim design rules. Lithographic results indicate that O.35im lines/spaces are achievable using both conventional i-line and deep Uv techniques, however, the implementation of phase shift reticles enhances the process latitudes for i-line at O.35im.

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Section: Lithographic Performancementioning

confidence: 99%

Evaluation of high-numerical-aperture wide-field steppers for 0.35-micron design rules

Katz¹,

Greeneich²,

Rogoff³

et al. 1992

SPIE Proceedings

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“…In this section, a pair of "nested elbows," extracted from a larger layout, is evaluated under deep ultra violet (DUV) lithography conditions for linewidth ranging from 0.37 to 0.25 m. The modeling of the photoresist (SNR248 from Shipley Co.) as well as the exposure and development of the resist is done explicitly using data obtained from two papers [31], [32], in which, the performance of SNR248 photoresist is evaluated for different values of numerical aperture, defocus, exposure dose, resist thickness, softbake and post exposure bake for a nominal linewidth of 0.35 m. The optical characteristics of silicon, the SNR248 resist, and an anti-reflective coating, as a function of wavelength (248 nm) were specified to Depict. Also, a model for development of SNR248 based on the Mack model [33] was defined.…”

Section: B Evaluation Of a Set Of Nested Elbows Under Duv Conditionsmentioning

confidence: 99%

Automated evaluation of critical features in VLSI layouts based on photolithographic simulations

Sengupta

Cavallaro

Wilson

et al. 1997

IEEE Trans. Semicond. Manufact.

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In this paper, we address the problem of identifying and evaluating "critical features" in an integrated circuit (IC) layout. The "critical features" (e.g., nested elbows and open ends) are areas in the layout that are more prone to defects during photolithography. As feature sizes become smaller (sub-micron range) and as the chip area becomes larger, new process techniques (such as, using phase shifted masks for photolithography), are being used. Under these conditions, the only means to design compact circuits with good yield capabilities is to bring the design and process phases of IC manufacturing closer. This can be accomplished by integrating photolithography simulators with layout editors. However, evaluation of a large layout using a photolithography simulator is time consuming and often unnecessary. A much faster and efficient method would be to have a means of automatically identifying "critical features" in a layout and then evaluate the "critical features" using a photolithography simulator. Our technique has potential for use either to evaluate the limits of any new and nonconventional process technique in an early process definition phase or in a mask house, as a postprocessor to improve the printing capability of a given mask. This paper presents a CAD tool (An Integrated CAD Framework) which is built upon the layout editor, Magic, and the process simulator, Depict 3.0, that automatically identifies and evaluates "critical features."

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Anti‐reflective coating for deep UV lithography process enhancement

Barnes

Flaim

Jones

et al. 1992

Polymer Engineering & Sci

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We describe here performance enhancements provided by an anti‐reflective coating (ARC), developed for deep UV applications. The reduction in substrate reflections provided by the ARC layer results in significant increases in resolution capability and process latitude compared to single layer deep UV resist. Increased linewidth control and patterning capability for highly reflective, grainy, and topographical substrates is demonstrated.

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<title>Improving the performance and usability of a wet-developable DUV resist for sub-500nm lithography</title>

Cited by 6 publications

References 0 publications

Evaluation of high-numerical-aperture wide-field steppers for 0.35-micron design rules

Evaluation of high-numerical-aperture wide-field steppers for 0.35-micron design rules

Automated evaluation of critical features in VLSI layouts based on photolithographic simulations

Anti‐reflective coating for deep UV lithography process enhancement

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