&lt;title&gt;Image Converter With III-V Compound Reflective Mode Photocathode&lt;/title&gt;

Palmer, H. L.; Koda, N. J.; Dinan, J. H.

doi:10.1117/12.953862

Cited by 3 publications

(1 citation statement)

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“…Additionally, some imaging devices such as vacuum ultraviolet sensitive image tubes must employ the reflection-mode photocathodes [11]. So far some work pertaining to the application of reflection-mode photocathodes in imaging detectors have been reported [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Resolution characteristics for reflection-mode exponential-doping GaN photocathode

Wang

Qian

et al. 2014

Appl. Opt.

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According to the expression for modulation transfer function obtained by solving the established 2D continuity equation, the resolution characteristics for reflection-mode exponential-doping and uniform-doping GaN photocathodes have been calculated and comparatively analyzed. These calculated results show that the exponential-doping structure can upgrade not only the resolution capability but also the quantum efficiency for a GaN photocathode. The improvement mechanism is different from the approach for high resolution applied by reducing Te and L(D) or increasing S(V), which leads to low quantum efficiency. The main contribution factor of this improvement is that the mechanism that transports electrons toward the NEA surface is facilitated by the built-in electric field formed by this exponential-doping structure, and the corresponding lateral diffusion is reduced.

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