&lt;title&gt;HgCdTe detectors for infrared remote sensing applications&lt;/title&gt;

D'Souza, Arvind I.; Dawson, Larry C.; Anderson, Eric J.; Markum, A. D.; Tennant, W. E.; Bubulac, L. O.; Zandian, Majid; Pasko, J. G.; McLevige, W. V.; Edwall, Dennis E.; Derr, Jeffrey W.; Jandik, John E.

doi:10.1117/12.298105

Cited by 9 publications

(8 citation statements)

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“…The baseline detector architecture is a p-on-n DLPH 6 diode. Benefits of the DLPH architecture 1,7,8 , include a reduction in surface generationrecombination and tunneling currents, and an increase in total dose radiation hardness 8 , both of which are essential detector attributes for remote sensing and strategic environment applications. Those benefits are realized by incorporating a buried narrow-band gap active layer in the DLPH architecture.…”

Section: Methodsmentioning

confidence: 99%

Device analysis of MBE HgCdTe p-on-n photovoltaic detectors in 5- to 15-μm wavelength range

et al. 2004

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An attempt is made to connect the material parameters of Hg 1-x Cd x Te layer growth to the parameters measured following photovoltaic detector fabrication. We found that the Cd composition X value extracted from spectral response measurements on detectors at 78 K are lower than the X values obtained from the room temperature transmission measurements, or the X value used to fit the measured material minority carrier lifetime versus temperature data. The lateral collection length L c that determines the thermally generated carriers that contribute to the diffusion current and L opt extracted from the "flood-illuminated" to "focused-spot" photocurrent ratio are in excellent agreement.Devices exhibit near theoretical R o A uniformity at 77K for MWIR, LWIR and VLWIR. R o A opt was also found to be uniform throughout the range of detector dimensions measured such as 8 µm diameter circular to 250 µm x 250 µm square. Median R o A opt values are 1266, 66 and 0.75 ohm-cm 2 for the 9.7, 11.3 and 15.4 µm cutoff wavelengths respectively. The uniformity in R o A opt confirms that the detector performance is limited by the bulk properties of the material, and not by surface effects.

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Section: Methodsmentioning

confidence: 99%

Device analysis of MBE HgCdTe p-on-n photovoltaic detectors in 5- to 15-μm wavelength range

et al. 2004

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“…The detector architecture utilized is the p-on-n doublelayer planar heterostructure (DLPH). 8 Details of the DLPH fabrication process have been described elsewhere. [9][10][11][12] Pixel pitch dimensions of 120 lm 9 120 lm were also the dimensions of the microlenses fabricated in the substrate to focus radiation onto the interdigitated subelements.…”

Section: Interdigitated Pixel Concept and Implementationmentioning

confidence: 99%

Monte Carlo Modeling of VLWIR HgCdTe Interdigitated Pixel Response

D'Souza¹,

Stapelbroek²,

Wijewarnasuriya

2010

Journal of Elec Materi

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Increasing very long-wave infrared (VLWIR, k c % 15 lm) pixel operability was approached by subdividing each pixel into four interdigitated subpixels. High response is maintained across the pixel, even if one or two interdigitated subpixels are deselected (turned off), because interdigitation provides that the preponderance of minority carriers photogenerated in the pixel are collected by the selected subpixels. Monte Carlo modeling of the photoresponse of the interdigitated subpixel simulates minority-carrier diffusion from carrier creation to recombination. Each carrier generated at an appropriately weighted random location is assigned an exponentially distributed random lifetime s i , where hs i i is the bulk minority-carrier lifetime. The minority carrier is allowed to diffuse for a short time ds, and the fate of the carrier is decided from its present position and the boundary conditions, i.e., whether the carrier is absorbed in a junction, recombined at a surface, reflected from a surface, or recombined in the bulk because it lived for its designated lifetime. If nothing happens, the process is then repeated until one of the boundary conditions is attained. The next step is to go on to the next carrier and repeat the procedure for all the launches of minority carriers. For each minority carrier launched, the original location and boundary condition at fatality are recorded. An example of the results from Monte Carlo modeling is that, for a 20-lm diffusion length, the calculated quantum efficiency (QE) changed from 85% with no subpixels deselected, to 78% with one subpixel deselected, 67% with two subpixels deselected, and 48% with three subpixels deselected. Demonstration of the interdigitated pixel concept and verification of the Monte Carlo modeling utilized k c (60 K) % 15 lm HgCdTe pixels in a 96 9 96 array format. The measured collection efficiency for one, two, and three subelements selected, divided by the collection efficiency for all four subelements selected, matched that calculated using Monte Carlo modeling.

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“…Details of the detector architecture have been described previously. [5][6][7][8][9][10] Normally, detectors are AR-coated to reduce reflection losses from the substrate in a target spectral bandwidth. AR coatings can be single or multilayer.…”

Section: Detector Architecturementioning

confidence: 99%

Spectral Response Model of Backside-Illuminated HgCdTe Detectors

D'Souza

Robinson

Wijewarnasuriya

et al. 2011

Journal of Elec Materi

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Backside-illuminated HgCdTe detectors fabricated on thick CdZnTe substrates have an optical path such that the incident radiation traverses the antireflection (AR) coating layers, the thick CdZnTe substrate, and finally the different layers of the detector. Modeling the spectral response first involves a coherent calculation of the transmission and reflection of a multilayer AR coating on the backside of the CdZnTe substrate. Second, a coherent calculation is made of the reflection and transmission coefficients for the stack of detector materials including wavelength-dependent complex refractive indexes for the detector materials. Third, the transmission and reflection coefficients are then used in an incoherent calculation to account for the multiple reflections in the thick CdZnTe substrate. For the coherent calculations, a stack matrix is constructed from the multiplication of matrices that track the phase and amplitude of the waves propagating across interfaces and from one side of a layer to the other side. These calculations are combined to compute the spectral response and reflectance of the detector as a function of wavelength.

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<title>HgCdTe detectors for infrared remote sensing applications</title>

Cited by 9 publications

References 0 publications

Device analysis of MBE HgCdTe p-on-n photovoltaic detectors in 5- to 15-μm wavelength range

Device analysis of MBE HgCdTe p-on-n photovoltaic detectors in 5- to 15-μm wavelength range

Monte Carlo Modeling of VLWIR HgCdTe Interdigitated Pixel Response

Spectral Response Model of Backside-Illuminated HgCdTe Detectors

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