&lt;title&gt;First environmental data from the EUV engineering test stand&lt;/title&gt;

Klebanoff, Leonard E.; Malinowski, M. E.; Grunow, Philip A.; Clift, W. Miles; Steinhaus, Chip; Leung, Alvin H.; Haney, Steven J.

doi:10.1117/12.436676

Cited by 22 publications

(10 citation statements)

References 1 publication

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“…The EUV environmental issues are understood, mitigation approaches have been validated, and EUV optic contamination appears to be manageable. Further data concerning the ETS environment can be found in the paper by Klebanoff et al in these proceedings 4 . Figure 5.…”

Section: Environmental Subsystemmentioning

confidence: 99%

<title>System integration and performance of the EUV engineering test stand</title>

Tichenor¹,

Ray-Chaudhuri²,

Replogle³

et al. 2001

SPIE Proceedings

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The Engineering Test Stand (ETS) is a developmental lithography tool designed to demonstrate full-field EUV imaging and provide data for commercial-tool development. In the first phase of integration, currently in progress, the ETS is configured using a developmental projection system, while fabrication of an improved projection system proceeds in parallel. The optics in the second projection system have been fabricated to tighter specifications for improved resolution and reduced flare. The projection system is a 4-mirror, 4x-reduction, ring-field design having a numeral aperture of 0.1, which supports 70 nm resolution at a k 1 of 0.52. The illuminator produces 13.4 nm radiation from a laser-produced plasma, directs the radiation onto an arc-shaped field of view, and provides an effective fill factor at the pupil plane of 0.7. The ETS is designed for fullfield images in step-and-scan mode using vacuum-compatible, magnetically levitated, scanning stages. This paper describes system performance observed during the first phase of integration, including static resist images of 100 nm isolated and dense features.

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Section: Environmental Subsystemmentioning

confidence: 99%

<title>System integration and performance of the EUV engineering test stand</title>

Tichenor¹,

Ray-Chaudhuri²,

Replogle³

et al. 2001

SPIE Proceedings

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“…For example, 35 Å of carbon deposited on an optic will reduce the relative reflectivity R/Ro to 0.95, an intolerable loss of reflection for an optic. This paper, the third in a sequence on the ETS environment [3,4], reviews experiments conducted in the ETS in the past year that investigate these phenomena during high power operation of the Xe LPP source. The outline of the paper is as follows: Section II will give experimental details.…”

Section: Introductionmentioning

confidence: 99%

Rates and mechanisms of optic contamination in the EUV engineering test stand

Grunow¹,

Klebanoff²,

Graham³

et al. 2003

SPIE Proceedings

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The EUV Engineering Test Stand (ETS) is a full-field, alpha-class Extreme Ultraviolet Lithography (EUVL) tool that has demonstrated the printing of 70 nm resolution scanned images. The tool employs Mo/Si multilayer-coated optics that reflect EUV radiation (13.4nm / 92.5eV) with ~67% peak reflectance per optic. For good reflectivity, many (≥40) Mo/Si layers must be present. Consequently, processes such as plasma-induced multilayer erosion, which reduces the number of bilayer pairs on plasma-facing optics, need to be understood. In addition, since most materials readily absorb EUV photons, it is important to prevent contamination of mirror surfaces with EUV absorbing material. Contamination can occur by EUV photons or secondary electrons "cracking" hydrocarbons or other species adsorbed on the optical surfaces.The first ETS condenser component, referred to as C1, faces the plasma and is coated with Mo/Si multilayers. Data collected from Mo/Si witness plates placed at the C1 position indicate erosion, using the Xe Laser Produced Plasma (LPP) spray jet, of 1 bilayer per ~15 million shots. In the spray jet studies, erosion was found to depend sensitively on the composition of the residual background environment. Addition of low levels, ~7x10 -7 Torr, of H 2 O to the 1 mTorr Xe background produced oxidation of the Si cap, and significantly slowed spray jet-induced erosion. Operation of the plasma changed the environment in the Illuminator Chamber from oxidizing to carbonizing, thereby changing the nature of the contamination found environment at the C3 optic which does not view the plasma directly (and therefore does not erode). The change in environment is attributed to plasma-induced outgassing of fluorocarbons in the Illuminator. Due to the non-zero conductance between the Illuminator and Main Chambers, fluorocarbons were also found in the Main Chamber during Xe LPP operation. RGA data are presented that document this effect. In the presence of such outgassing, Carbon deposition rates were measured for the C3, and P.O. Box optics. For C3, a C deposition rate of 3 Å / 10 million shots was found, while for the PO Box, a C deposition rate of 0.02 Å / 10 million shots was found from the data. All data was acquired with no attempt to mitigate C deposition with gas-phase additives such as O 2 .

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“…Numerous studies show that carbon growth and oxidation, induced by residual water and hydrocarbons in the projection chamber, are the main reasons for the reduced lifetime of projection optics that are exposed to EUV light 1,2 . However, the majority of these studies were conducted with synchrotron radiation at high intensities but with a rather small and inhomogeneous exposed sample-area.…”

Section: Introductionmentioning

confidence: 99%

Multi-technique study of carbon contamination and cleaning of Mo/Si mirrors exposed to pulsed EUV radiation

et al. 2010

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Comparative lifetime studies of Mo/Si multilayer mirrors have been conducted at the Exposure Test Stand (ETS) using a pulsed Xe-discharge EUV source at XTREME Technologies GmbH (Göttingen, Germany). Due to the large, homogeneous exposed sample area a multi-technique study of EUV induced carbon contamination and cleaning can be conducted using standard surface science techniques. EUV-reflectometry, X-ray photoelectron spectroscopy (XPS), small-angle X-ray reflectometry (SAXR), and Out-of-band (OOB) reflectometry (200 -1000 nm) were applied to investigate exposed samples and study EUV-induced changes of the surface composition. With this approach the influence of EUV-dose, cleaning-gas pressure and composition, and capping-layer material of the Mo/Si multilayer samples on the degradation and cleaning mechanism can be studied.

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<title>First environmental data from the EUV engineering test stand</title>

Cited by 22 publications

References 1 publication

<title>System integration and performance of the EUV engineering test stand</title>

<title>System integration and performance of the EUV engineering test stand</title>

Rates and mechanisms of optic contamination in the EUV engineering test stand

Multi-technique study of carbon contamination and cleaning of Mo/Si mirrors exposed to pulsed EUV radiation

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