&lt;title&gt;Fabrication of high-aspect ratio photonic bandgap structures on silicon-on-insulator&lt;/title&gt;

Naydenkov, Mikhail; Jalali, Bahram

doi:10.1117/12.379955

Cited by 7 publications

(3 citation statements)

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“…The feasibility of producing high-aspect-ratio trenches on SOI with high verticality has been demonstrated by other authors [34], [35]. Nevertheless, deviations from the considered dimensions of the optical structure (length of the DBRs and cavity) due to fabrication tolerances may affect the predicted device performance.…”

Section: Optical Analysis 1) Modalmentioning

confidence: 90%

Low-power-consumption short-length and high-modulation-depth silicon electrooptic modulator

Barrios

Almeida

Lipson

2003

J. Lightwave Technol.

115

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Abstract-In this paper, we propose and analyze a novel compact electrooptic modulator on a silicon-on-insulator (SOI) rib waveguide. The device confines both optical field and charge carriers in a micron-size region. The optical field is confined by using a planar Fabry-Pérot microcavity with deep Si/SiO 2 Bragg reflectors. Carriers are laterally confined in the cavity region by employing deep-etched trenches. The refractive index of the cavity is varied by using the free-carrier dispersion effect produced by a p-i-n diode. The device has been designed and analyzed using electrical and optical simulations. Our calculations predict, for a 20-m-long device, a modulation depth of around 80% and a transmittance of 86% at an operating wavelength of 1.55 m by using an electrical power under dc conditions on the order of 25 W.

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Section: Optical Analysis 1) Modalmentioning

confidence: 90%

Low-power-consumption short-length and high-modulation-depth silicon electrooptic modulator

Barrios

Almeida

Lipson

2003

J. Lightwave Technol.

115

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“…It must be noted the low values of the electrical power shown in Table III as well as the small refi"active-index change in the cavity (0.1%) required to achieve high modulation depths. The feasibility of producing high-aspect-ratio trenches on SOI with high verticality has been demonstrated by other authors [34], [35]. Nevertheless, deviations from the considered dimensions of the optical structure (length of the DBRs and cavity) due to fabrication tolerances may affect the predicted device perfonnance.…”

Section: Optical Analysis 1) Modalmentioning

confidence: 99%

An All-Optical Silicon Nano-Transistor

Lipson¹

2004

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“…Thus, in recent work, Tokushima et al 16 demonstrated 1.55-m light propagation through triangular-lattice 2-D PhC fabricated using a silicon dioxide mask and an electron-cyclotronresonance ͑ECR͒ plasma etcher with a gas mixture of Cl 2 and O 2 . Naydenkov and Jalali 17 reported the fabrication of photonic bandgap structures on SOI using a timemultiplexed inductively coupled fluorine plasma. Lončar et al 18 reported the fabrication of silicon PhC optical waveguides using a chemically assisted ion-beam etching ͑CAIBE͒ system with a 1250-V Ar ϩ beam assisted by XeF 2 as the reactive gas.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of high-fill-factor photonic crystal devices on silicon-on-insulator substrates

Venkataraman

Murakowski

Adam

et al. 2003

J. Micro/Nanolith. MEMS MOEMS

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Optimization of the photonic bandgap in finite-height photonic crystal (PhC) slab structures requires high-fill-factor lattices. We present a method for fabrication of high-fill-factor PhC devices in silicon-oninsulator (SOI) substrates using electron-beam lithography and highaspect-ratio reactive-ion etching (RIE). We achieve 8:1 aspect-ratio PhC structures with 60-nm vertical membrane walls using a custom deep reactive-ion etching process in a conventional low-end RIE with patterned resist as the only etch mask. We present examples of various PhC devices fabricated using this method including a high-efficiency coupling structure for PhC waveguides.

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<title>Fabrication of high-aspect ratio photonic bandgap structures on silicon-on-insulator</title>

Cited by 7 publications

References 0 publications

Low-power-consumption short-length and high-modulation-depth silicon electrooptic modulator

Low-power-consumption short-length and high-modulation-depth silicon electrooptic modulator

An All-Optical Silicon Nano-Transistor

Fabrication of high-fill-factor photonic crystal devices on silicon-on-insulator substrates

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