<title>Fabrication and imaging of quantum-well wire structures</title>

Abstract

SwedenABSTRACr Quantum well wire structures in metalorganic vapor phase epitaxy (MOVPE) grown Ga531n•47As/hiP and in GaIn15As/GaAs have been fabricated by electron beam lithography and subsequent metalorganic reactive ion etching (MORE) and/or wet etching. The dry etching was optimized for low-damage conditions and for maskto-wafer pattern transfer. In the wet etching process, an underetching was implemented in order to reduce the iinewidth defined by the etching mask. A wet etching step has been used after the dry etching for removal of the partly damaged surface region and for smoothening of the sidewalls of the wires. Differently processed areas were excited selectively by low-temperature cathodoluminescence (CL) from which the optical quality of the wire material was evaluated and blue shifts for the wires as large as 10 meV were observed. Individual wires have also been imaged and effects of one-dimensional exciton diffusion have been probed.