&lt;title&gt;EUV engineering test stand&lt;/title&gt;

Tichenor, Daniel A.; Kubiak, Glenn D.; Replogle, William C.; Klebanoff, Leonard E.; Wronosky, John B.; Hale, Layton C.; Chapman, Henry N.; Taylor, John S.; Folta, James A.; Montcalm, Claude; Hudyma, Russell M.; Goldberg, Kenneth A.; Naulleau, Patrick

doi:10.1117/12.390083

Cited by 35 publications

(18 citation statements)

References 11 publications

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“…8 and 9. The resolution is significantly improved when compared to the 100 nm dense features printed using PO Box 1 in the ETS [2]. The image quality at 70 nm is at least as high as that of 100 nm features printed using PO Box 1.…”

Section: Po Box 2 Characterizationmentioning

confidence: 93%

“…The Set 2 optics is of the same design as Set 1 but is of higher optical quality and will enable the ETS to operate at the designed-to specifications. With the exception of high frequency roughness (spatial periods smaller than 1 micron), almost a factor of two improvement in the figure and surface finish of the Set 2 optical surfaces was achieved as compared with the Set 1 optics [2]. The improvement in optics quality results in an optical system with lower wavefront aberration and much reduced flare, both of which leads to improved lithographic performance.…”

Section: Projection Subsystemmentioning

confidence: 99%

“…An alpha-class tool, called the EUV Engineering Test Stand (ETS), has been developed to demonstrate full-field printing of EUV images and to develop the required system learning for EUV commercialization [2]. Early last year, the ETS demonstrated full-field printing of 100 nm features in both static and step-and-scan mode using a low power (40W Nd:YAG) laser produced plasma (LPP) source [3][4].…”

Section: Introductionmentioning

confidence: 99%

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Current Status of the EUV Engineering Test Stand.

Leung

Tichenor

Replogle

et al. 2002

J. Photopol. Sci. Technol.

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The EUV Engineering Test Stand (ETS) has demonstrated the printing of static and scanned 100 nm dense features. This milestone was first achieved in 2001 with a developmental set of projection optics (P0 Box 1) and with a low power LPP source (40W drive laser). Since that time, the source has been upgraded to a 1500W (3 chains, 500W per chain) TRW drive laser. Operating with one chain (500W), the printed static images for 100 nm features are comparable to those obtained with the low power source, while exposure time was decreased by a factor of 15 to 30. One hundred nanometer dense features printed in step-and-scan mode are of the same image quality as those obtained in static imaging. The stages have demonstrated combined x any y j fitter values of 2 to 4 nm RMS over most of the wafer stage travel range, at the designed scanned speed of 10 mm/s at the wafer. This value is less than half of the designed value and provides sufficient stability to support printing of 70 nm features. EUV specific sensors at the wafer and reticle planes have been demonstrated with the TRW laser and integration will be completed later this year. The developmental projection optics (P0 Box 1) will be replaced later this year with an improved projection optics system (P0 Box 2) capable of printing 70 nm dense features.

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Section: Po Box 2 Characterizationmentioning

confidence: 93%

Section: Projection Subsystemmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Current Status of the EUV Engineering Test Stand.

Leung

Tichenor

Replogle

et al. 2002

J. Photopol. Sci. Technol.

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“…As part of the EUVL program at Sandia National Laboratories (SNL), a spectral purity filter was developed for the Engineering Test Stand (ETS) 1,2,3 . The ETS is a full-field, alpha-class, step and scan EUVL tool that has been developed by SNL, Lawrence Livermore National Laboratory (LLNL), and Lawrence Berkeley National Laboratory (LBNL).…”

Section: Introductionmentioning

confidence: 99%

Zirconium and niobium transmission data at wavelengths from 11-16 nm and 200-1200 nm

Johnson¹,

Soufli

Gullikson

et al. 2004

SPIE Proceedings

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Transmission measurements of niobium and zirconium at both extreme-ultraviolet (EUV) and ultraviolet, visible, and near infrared (UV/Vis/NIR) wavelengths are presented. Thin foils of various thicknesses mounted on nickel mesh substrates were measured, and these data were used to calculate the optical constants δ and β of the complex refractive index n = 1-δ +iβ. β values were calculated directly from the measured transmittance of the foils after normalizing for the nickel mesh. The average β values for each set of foils are presented as a function of wavelength. The real (dispersive) part of the refractive index, δ was then calculated from Kramers-Kronig analysis by combining these β values with those from previous experimental data and the atomic tables.

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“…An alpha-class tool, called the EUV Engineering Test Stand (ETS), has been developed to demonstrate full-field printing of EUV images and to develop the system learning required to commercialize EUVL technology 1 . The ETS is designed to meet the system learning objectives at critical dimensions in the 70 nm to 100 nm range.…”

Section: Introductionmentioning

confidence: 99%

<title>System integration and performance of the EUV engineering test stand</title>

Tichenor¹,

Ray-Chaudhuri²,

Replogle³

et al. 2001

SPIE Proceedings

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The Engineering Test Stand (ETS) is a developmental lithography tool designed to demonstrate full-field EUV imaging and provide data for commercial-tool development. In the first phase of integration, currently in progress, the ETS is configured using a developmental projection system, while fabrication of an improved projection system proceeds in parallel. The optics in the second projection system have been fabricated to tighter specifications for improved resolution and reduced flare. The projection system is a 4-mirror, 4x-reduction, ring-field design having a numeral aperture of 0.1, which supports 70 nm resolution at a k 1 of 0.52. The illuminator produces 13.4 nm radiation from a laser-produced plasma, directs the radiation onto an arc-shaped field of view, and provides an effective fill factor at the pupil plane of 0.7. The ETS is designed for fullfield images in step-and-scan mode using vacuum-compatible, magnetically levitated, scanning stages. This paper describes system performance observed during the first phase of integration, including static resist images of 100 nm isolated and dense features.

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<title>EUV engineering test stand</title>

Cited by 35 publications

References 11 publications

Current Status of the EUV Engineering Test Stand.

Current Status of the EUV Engineering Test Stand.

Zirconium and niobium transmission data at wavelengths from 11-16 nm and 200-1200 nm

<title>System integration and performance of the EUV engineering test stand</title>

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