&lt;title&gt;Effect of basic additives on sensitivity and diffusion of acid in chemical amplification resists&lt;/title&gt;

Asakawa, Koji; Ushirogouchi, Tohru; Nakase, Makoto

doi:10.1117/12.210361

Cited by 45 publications

(38 citation statements)

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“…214) Asakawa et al suggested that acids are deactivated by quenchers at the start of PEB and that these acids cannot participate as a catalyst for decomposing the inhibitor. 213) Hinsberg et al proposed a ''proportional neutralization model'', which assumes that quenchers cause an initial proportional reduction in the amount of acids generated by exposure. 207) Also, the ''standard addition technique'' is known as a method of determining the efficiency of the decomposition of photoacid generators to produce a photoacid.…”

Section: Proton Migration and Protonation Sitesmentioning

confidence: 99%

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Radiation Chemistry in Chemically Amplified Resists

Kozawa

Tagawa

2010

Jpn. J. Appl. Phys.

333

319

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Historically, in the mass production of semiconductor devices, exposure tools have been repeatedly replaced with those with a shorter wavelength to meet the resolution requirements projected in the International Technology Roadmap for Semiconductors issued by the Semiconductor Industry Association. After ArF immersion lithography, extreme ultraviolet (EUV; 92.5 eV) radiation is expected to be used as an exposure tool for the mass production at or below the 22 nm technology node. If realized, 92.5 eV EUV will be the first ionizing radiation used for the mass production of semiconductor devices. In EUV lithography, chemically amplified resists, which have been the standard resists for mass production since the use of KrF lithography, will be used to meet the sensitivity requirement. Above the ionization energy of resist materials, the fundamental science of imaging, however, changes from photochemistry to radiation chemistry. In this paper, we review the radiation chemistry of materials related to chemically amplified resists. The imaging mechanisms from energy deposition to proton migration in resist materials are discussed.

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Section: Proton Migration and Protonation Sitesmentioning

confidence: 99%

“…212,213) Because the reaction of acids with quenchers is essential for pattern formation, many studies on it have been carried out. It has been reported that neutralization is a diffusion-controlled reaction in resists similarly to that in a solution.…”

Section: Proton Migration and Protonation Sitesmentioning

confidence: 99%

Radiation Chemistry in Chemically Amplified Resists

Kozawa

Tagawa

2010

Jpn. J. Appl. Phys.

333

319

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“…With such additional energy, acids are uniformly generated around the target pattern. It has been reported that the neutralization between acids and quenchers occurs before PEB even at room temperature in the annealing-type chemically amplified resists [38,39]. Such preneutralization cancels the effect of backscattered electrons.…”

Section: Resultsmentioning

confidence: 99%

Requirement for Suppression of Line Width Roughness in Fabrication of Line-and-Space Patterns with 7 nm Quarter-Pitch Using Electron Beam Lithography with Chemically Amplified Resist Process

Kozawa

2016

J. Photopol. Sci. Technol.

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The suppression of line width roughness (LWR) is the most difficult task in the development of resist materials used for sub-10 nm fabrication. We have investigated the feasibility of the fabrication of line-and-space patterns with 7 nm quarter-pitch (7 nm space width and 28 nm pitch) with a chemically amplified resist process, assuming electron beam (EB) lithography. In this study, we investigated the requirement for suppressing LWR to 10 and 20% critical dimension (CD), using the simulation on the basis of the reaction mechanisms of chemically amplified EB resists. The simulation results suggested that the suppression of LWR to 20% CD is feasible, while 10% CD LWR is away from the current status of chemically amplified resists.

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“…In this study, the acid diffusion effect was evaluated by measuring the resist-film thickness loss after PEB. Figure 4 shows the experimental-process flow of the thickness loss measurement [29]. The methacrylate-type polymer which employed the tert-butyl-methacrylate as a protecting group with the mixed solution of propyleneglycol monomethyl ether acetate (PGMEA) and propyleneglycol monomethyl ether (PGME) was spin-coated on a 4-inches wafer and the prebake was carried out on a hot plate at the temperature of 130 ℃ for 90 s. The film thickness was approximately 100 nm.…”

Section: The Thickness Loss In Varying the Euv Exposure Dosementioning

confidence: 99%

EUV Resist Chemical Analysis by Soft X-ray Absorption Spectroscopy for High Sensitivity Achievement

Emura

Watanabe

Yamaguchi

et al. 2014

J. Photopol. Sci. Technol.

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Simultaneous achievement of high sensitivity and low line edge roughness (LWR) is necessary in EUV resist. The chemical reaction analysis of EUV (Extreme Ultraviolet) chemical amplified (CA) resist and acid diffusion length evaluation was carried out. In order to achieve low LWR of the CA resist, the large chemical structure of the anion of photoacid generator (PAG) is required for shortening the acid diffusion length. On the other hand, in order to increase the sensitivity, on the basis of the chemical reaction analysis using the soft x-ray absorption spectroscopy, the decomposition reaction of the large chemical structure of the PAG anion should be taken in account in addition of ionization reaction. However, if the decomposition reaction occur, the acid diffusion length will become shorter than that as expected. It is found that the Imidate-type of anion of PAG has high sensitivity and short diffusion length. The chemical reaction analysis by the soft x-ray absorption spectroscopy using the synchrotron radiation with the combination analysis of the acid diffusion are useful method for the mitigation of high sensitivity and low LWR.

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<title>Effect of basic additives on sensitivity and diffusion of acid in chemical amplification resists</title>

Cited by 45 publications

References 0 publications

Radiation Chemistry in Chemically Amplified Resists

Radiation Chemistry in Chemically Amplified Resists

Requirement for Suppression of Line Width Roughness in Fabrication of Line-and-Space Patterns with 7 nm Quarter-Pitch Using Electron Beam Lithography with Chemically Amplified Resist Process

EUV Resist Chemical Analysis by Soft X-ray Absorption Spectroscopy for High Sensitivity Achievement

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